Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Calman, E. V."'
Autor:
Calman, E. V., Fowler-Gerace, L. H., Butov, L. V., Nikonov, D. E., Young, I. A., Hu, S., Mischenko, A., Geim, A. K.
Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heteros
Externí odkaz:
http://arxiv.org/abs/1901.08664
Publikováno v:
Nature Commun. 9, 1895 (2018)
Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena in excito
Externí odkaz:
http://arxiv.org/abs/1709.07043
Autor:
Dorow, C. J., Hasling, M. W., Calman, E. V., Butov, L. V., Wilkes, J., Campman, K. L., Gossard, A. C.
Publikováno v:
Phys. Rev. B 95, 235308 (2017)
We present the direct measurements of magnetoexciton transport. Excitons give the opportunity to realize the high magnetic field regime for composite bosons with magnetic fields of a few Tesla. Long lifetimes of indirect excitons allow the study kine
Externí odkaz:
http://arxiv.org/abs/1705.09077
Autor:
Kuznetsova, Y. Y., Dorow, C. J., Calman, E. V., Butov, L. V., Wilkes, J., Campman, K. L., Gossard, A. C.
Publikováno v:
Phys. Rev. B 95, 125304 (2017)
We present spatially- and spectrally-resolved photoluminescence measurements of indirect excitons in high magnetic fields. Long indirect exciton lifetimes give the opportunity to measure magnetoexciton transport by optical imaging. Indirect excitons
Externí odkaz:
http://arxiv.org/abs/1610.03116
Autor:
Calman, E. V., Dorow, C. J., Fogler, M. M., Butov, L. V., Hu, S., Mishchenko, A., Geim, A. K.
Publikováno v:
Appl. Phys. Lett. 108, 101901 (2016)
We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of \Mo* and hexagonal boron nitride (hBN). The emission of neutral and charged excitons is controlled by gate voltage, t
Externí odkaz:
http://arxiv.org/abs/1510.04410
Autor:
Hasling, M. W., Kuznetsova, Y. Y., Andreakou, P., Leonard, J. R., Calman, E. V., Dorow, C., Butov, L. V., Hanson, M., Gossard, A. C.
We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the ang
Externí odkaz:
http://arxiv.org/abs/1410.0622
Autor:
Andreakou, P., Poltavtsev, S. V., Leonard, J. R., Calman, E. V., Remeika, M., Kuznetsova, Y. Y., Butov, L. V., Wilkes, J., Hanson, M., Gossard, A. C.
Publikováno v:
Applied Physics Letters 104, 091101 (2014)
Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at th
Externí odkaz:
http://arxiv.org/abs/1310.7842
Akademický článek
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Autor:
Hasling, M. W., Kuznetsova, Y. Y., Andreakou, P., Leonard, J. R., Calman, E. V., Dorow, C. J., Butov, L. V., Hanson, M., Gossard, A. C.
Publikováno v:
Journal of Applied Physics; 1/14/2015, Vol. 117 Issue 2, p023108-1-023108-5, 5p, 1 Color Photograph, 2 Diagrams, 2 Graphs
Akademický článek
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