Zobrazeno 1 - 10
of 1 240
pro vyhledávání: '"Calleja, E"'
Autor:
Aseev, P., Gačević, Ž., Mánuel, J. M., Jiménez, J. J., García, R., Morales, F. M., Calleja, E.
Publikováno v:
Journal of Crystal Growth 493 (2018) 65
This work presents an experimental and theoretical insight into formation mechanisms of single crystalline wurtzite InN quantum dots (QDs) fabricated via metal droplet epitaxy (DE) by employing plasma assisted molecular beam epitaxy. The applied proc
Externí odkaz:
http://arxiv.org/abs/2402.00223
Autor:
Rajak, Piu, Islam, Mahabul, Jiménez, J. J., Mánuel, J. M., Aseev, P., Gačević, Ž., Calleja, E., García, R., Morales, Francisco M., Bhattacharyya, Somnath
Publikováno v:
Nanoscale, 2019, 11, 13632
InN quantum dots (QDs) are considered to be promising nanostructures for different device applications. For any hexagonal AB stacking semiconductor system, polarity is an important feature which affects the electronic properties. Therefore, the deter
Externí odkaz:
http://arxiv.org/abs/2402.00213
Publikováno v:
Appl. Phys. Lett. 93, 191907 (2008)
Indium incorporation and surface morphology of InAlN layers grown on (0001)GaN by plasma-assisted molecular beam epitaxy were investigated as a function of the impinging In flux and the substrate temperature in the 450-610$^{\circ}$C range. In incorp
Externí odkaz:
http://arxiv.org/abs/2401.17340
Publikováno v:
Appl. Phys. Lett. 91, 161904 (2007)
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio
Externí odkaz:
http://arxiv.org/abs/2401.17341
Publikováno v:
J. Appl. Phys. 104, 033541 (2008)
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption usi
Externí odkaz:
http://arxiv.org/abs/2401.17339
Autor:
Fernández-Garrido, S., Pereiro, J., González-Posada, F., Muñoz, E., Calleja, E., Redondo-Cubero, A., Gago, R.
Publikováno v:
J. Appl. Phys. 103, 046104 (2008)
Room temperature photoluminescence and optical absorption spectra have been measured in wurtzite In$_{x}$Al$_{y}$Ga$_{1-x-y}$N (x $\approx$ 0.06, 0.02 < y < 0.27) layers grown by molecular beam epitaxy. Photoluminescence spectra show both an enhancem
Externí odkaz:
http://arxiv.org/abs/2402.00582
Autor:
Fernández-Garrido, S., Redondo-Cubero, A., Gago, R., Bertram, F., Christen, J., Luna, E., Trampert, A., Pereiro, J., Muñoz, E., Calleja, E.
Publikováno v:
J. Appl. Phys. 104, 083510 (2008)
Indium incorporation into wurtzite (0001)-oriented In$_{x}$Al$_{y}$Ga$_{1-x-y}$N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 $^{\circ}$C) and the AlN mole fraction (0.01 < y < 0.
Externí odkaz:
http://arxiv.org/abs/2402.00581
Publikováno v:
JOURNAL OF APPLIED PHYSICS 106, 126102 (2009)
The morphology of GaN samples grown by plasma-assisted molecular beam epitaxy on Si(111) was systematically studied as a function of impinging Ga/N flux ratio and growth temperature (750-850{\deg}C).Two different growth regimes were identified: compa
Externí odkaz:
http://arxiv.org/abs/2401.16328
Autor:
Sánchez, A. M., Molina, S. I., Pacheco, F. J., García, R., Sánchez-García, M. A., Sánchez, F. J., Calleja, E.
Publikováno v:
Boletín de la Sociedad Española de Cerámica y Vidrio, Vol 39, Iss 4, Pp 468-471 (2000)
The Si doping effect on the defect structure in GaN epilayers grown by molecular beam epitaxy on Si(111) substrates using AlN buffer layers has been studied. Transmission electron microscopy and related techniques have been used to carry out the stru
Externí odkaz:
https://doaj.org/article/0375c57c86274802b5751b576d321510
Autor:
Tabernero, J., Taieb, J., Fakih, M., Prager, G.W., Van Cutsem, E., Ciardiello, F., Mayer, R.J., Amellal, N., Skanji, D., Calleja, E., Yoshino, T.
Publikováno v:
In ESMO Open March 2024 9(3)