2D/3D Simulations of Black-Silicon Interdigitated Back-Contacted c-Si(n) Solar Cells

Autor: Calle Martín, Eric, Carrió, David, Ortega Villasclaras, Pablo Rafael, von Gastrow, Guillaume, Savin, Hele, Martín García, Isidro, Alcubilla González, Ramón

Publikováno v: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname

33rd European Photovoltaic Solar Energy Conference and Exhibition; 857-860
Black silicon (b-Si) reduces drastically light reflectance in the front side of c-Si solar cells to values near zero for the whole absorbed solar spectrum. In this work,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81218c0ddc99da7fc322ee99efa159c2

Fabrication of a two axis sun sensor for the satellite IntaMicroSat Fabricación de un sensor solar en dos ejes para el satélite IntaMicroSat Fabricació d'un sensor solar en dos eixos per al satèl·lit IntaMicroSat

Autor: Calle Martín, Eric

Publikováno v: UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname

English: he goal of this project is the fabrication of a two axis sun sensor for the attitude control of the IntaMicroSat satellite. This sensor should detect the position of the sun with high accuracy (±1 º) and at an angle FOV (Field Of Vision) �

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::dd3acb122bac6e705467b01d6fa50a6e
http://hdl.handle.net/2099.1/12745

Boron diffused emitters passivated with Al2O3 films

Autor: Masmitjà Rusiñol, Gerard, Ortega Villasclaras, Pablo Rafael, López Rodríguez, Gema, Calle Martín, Eric, García Molina, Francisco Miguel, Martín García, Isidro, Orpella García, Alberto, Voz Sánchez, Cristóbal, Alcubilla González, Ramón

Publikováno v: Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)

In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4a274ae8ceb0ba747ff026381e411e82
http://hdl.handle.net/2117/19570