Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Caleb E. Glaser"'
Autor:
Andrew M. Armstrong, Andrew A. Allerman, Greg W. Pickrell, Mary H. Crawford, Caleb E. Glaser, Trevor Smith
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 318-323 (2021)
Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 μA/cm2 at 1250 V), excellent forward characteristics (ideality factor 1.6), and low specific on-resistance (1.1 mΩ.cm2) were realized
Externí odkaz:
https://doaj.org/article/8ef17d39cb45411983348f962825013f
Autor:
Caleb E. Glaser, Andrew T. Binder, Luke Yates, Andrew A. Allerman, Daniel F. Feezell, Robert J. Kaplar
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::312a2faf4a77383d19df2c648dd2d4b1
https://doi.org/10.1109/wipda49284.2021.9645149
https://doi.org/10.1109/wipda49284.2021.9645149
Autor:
Andrew T. Binder, Andrew A. Allerman, Caleb E. Glaser, Luke Yates, Brian D. Rummel, Trevor Smith, Jeramy R. Dickerson, Jeffrey Steinfeldt, Gregory Pickrell, Paul Sharps, Robert J. Kaplar, James A. Cooper
Publikováno v:
ECS Meeting Abstracts. :1361-1361
Wide-bandgap semiconductors have a significant advantage over conventional Si-based electronics by leveraging materials properties to achieve higher breakdown voltage, lower on-resistance, and high-frequency operation. For electric vehicle drivetrain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55846903ac4421c069a86c75af48f8a2
https://doi.org/10.1149/ma2022-02371361mtgabs
https://doi.org/10.1149/ma2022-02371361mtgabs
Autor:
Gregory W. Pickrell, Andrew M. Armstrong, Andrew A. Allerman, Mary H. Crawford, Daniel Feezell, Morteza Monavarian, Isaac Stricklin, Fred J Zutavern, Alan Mar, Emily Hirsch, Jack D. Flicker, Jarod J Delhotal, Joseph Dana Teague, Jane M. Lehr, Karen C. Cross, Caleb E. Glaser, Michael S Van Heukelom, Richard J Gallegos, Verle H Bigman, Robert J. Kaplar
Publikováno v:
ECS Meeting Abstracts. :1156-1156
Semiconductor materials with wide bandgaps, including GaN and AlxGa1-xN, offer many performance advantages for power electronic devices compared to conventional Si-based devices. These include larger critical electric fields enabling higher reverse b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3af2683b38fe627fadff4e5bceaf825d
https://doi.org/10.1149/ma2018-02/34/1156
https://doi.org/10.1149/ma2018-02/34/1156
Autor:
Robert J. Kaplar, Andrew A. Allerman, Andrew M. Armstrong, Mary H. Crawford, Greg W. Pickrell, Jeramy R. Dickerson, Jack D. Flicker, Michael P. King, Karen C. Cross, Caleb E. Glaser, Michael Van Heukelom, Albert G. Baca, Shahed Reza, Brianna Klein, Erica A. Douglas
Publikováno v:
ECS Meeting Abstracts. :1338-1338
SiC- and GaN-based power semiconductor devices have in the past few years enabled great improvements in the efficiency and power density of switching power converters. A wide variety of SiC devices (e.g. MOSFETs, JFETs, BJTs, thyristors, and PiN/Scho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de7ceb5915f89af722479ff1ecaf10f6
https://doi.org/10.1149/ma2017-02/31/1338
https://doi.org/10.1149/ma2017-02/31/1338