Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Calbi Gunder"'
Autor:
Emmanuel Wangila, Calbi Gunder, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 14, Iss 8, p 724 (2024)
We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new single-step growth technique that produces higher-quality material than a pr
Externí odkaz:
https://doaj.org/article/a1ca66d1e9c142f5b570aa73450f3e3f
Autor:
Calbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, Fernando Maia de Oliveira, Aida Sheibani, Serhii Kryvyi, Paul C. Attwood, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 909 (2024)
The growth of high-composition GeSn films in the future will likely be guided by algorithms. In this study, we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16% on GaAs (001) substrates via molecula
Externí odkaz:
https://doaj.org/article/09d29963985a4887bfcc8786ce77e394
Autor:
Emmanuel Wangila, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo
Publikováno v:
Crystals, Vol 14, Iss 5, p 414 (2024)
Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were inves
Externí odkaz:
https://doaj.org/article/6aaf73730ff746378b763ebdd942b523
Autor:
Emmanuel Wangila, Peter Lytvyn, Hryhorii Stanchu, Calbi Gunder, Fernando Maia de Oliveira, Samir Saha, Subhashis Das, Nirosh Eldose, Chen Li, Mohammad Zamani-Alavijeh, Mourad Benamara, Yuriy I. Mazur, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
Crystals, Vol 13, Iss 11, p 1557 (2023)
Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and crystal structure were investigated using ex situ characterization techniques.
Externí odkaz:
https://doaj.org/article/83d97a843ebc47b791ad56660221ca9e
Autor:
Emmanuel Wangila, Samir K. Saha, Rahul Kumar, Andrian Kuchuk, Calbi Gunder, Sylvester Amoah, Krista R. Khiangte, Zhong Chen, Shui-Qing Yu, Gregory J. Salamo
Publikováno v:
CrystEngComm. 24:4372-4380
Molecular beam epitaxy (MBE) was used to grow dissimilar materials like cubic Ge on a hexagonal c-plane sapphire substrate. To the authors' best knowledge, this is the first time single crystalline Ge was grown on a c-plane sapphire substrate.
Publikováno v:
Nanotechnology. 29(35)
The anisotropic nanostructures of noble metals are of great interest for plasmonic applications, due to the possibility of tuning the localized surface plasmon resonance (LSPR) across the UV-visible-near infrared (UV-vis-NIR) without sacrificing the
Publikováno v:
Nanotechnology; 8/31/2018, Vol. 29 Issue 35, p1-1, 1p