Zobrazeno 1 - 10
of 401
pro vyhledávání: '"Calarco R."'
Publikováno v:
In Ultramicroscopy December 2024 267
Autor:
Alsaigh, R.A., Shelford, L.R., Mohamad, H.J., Shalini, A., Al-Jarah, U.A.S., Bragaglia, V., Giussani, A., Calarco, R., Srivastava, G.P., Hicken, R.J.
Publikováno v:
In Solid State Communications 1 August 2022 351
Autor:
Kellner, J., Bihlmayer, G., Deringer, V. L., Liebmann, M., Pauly, C., Giussani, A., Boschker, J. E., Calarco, R., Dronskowski, R., Morgenstern, M.
Publikováno v:
Phys. Rev. B 96, 245408 (2017)
Scanning tunneling microscopy (STM) and spectroscopy (STS) in combination with density functional theory (DFT) calculations are employed to study the surface and subsurface properties of the metastable phase of the phase change material Ge$_{2}$Sb$_{
Externí odkaz:
http://arxiv.org/abs/1709.09649
Autor:
Rinaldi, C., Varotto, S., Asa, M., Slawinska, J., Fujii, J., Vinai, G., Cecchi, S., Calarco, R., Vobornik, I., Panaccione, G., Picozzi, S., Bertacco, R.
Publikováno v:
Nano Letters 18:5, 2751 (2018)
The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent spin-splitting is ori
Externí odkaz:
http://arxiv.org/abs/1707.07043
Autor:
Chèze, C., Feix, F., Anikeeva, M., Schulz, T., Albrecht, M., Riechert, H., Brandt, O., Calarco, R.
Publikováno v:
Appl. Phys. Lett. 110 (2017) 072104
We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(\sqrt{3}\times\!\sqrt{3})\text{
Externí odkaz:
http://arxiv.org/abs/1701.04680
Autor:
Elmers, H. J., Wallauer, R., Liebmann, M., Kellner, J., Morgenstern, M., Wang, R. N., Boschker, J. E., Calarco, R., Rader, O., Kutnyakhov, D., Chernov, S. V., Medjanik, K., Tusche, C., Ellguth, M., Volfova, H., Braun, J., Minar, J., Ebert, H., Schonhense, G.
Publikováno v:
Phys. Rev. B 94, 201403 (2016)
A comprehensive mapping of the spin polarization of the electronic bands in ferroelectric a-GeTe(111) films has been performed using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous measurement of
Externí odkaz:
http://arxiv.org/abs/1512.01363
Autor:
Rinaldi, C., Di Sante, D., Giussani, A., Wang, R. -N., Bertoli, S., Cantoni, M., Baldrati, L., Vobornik, I., Panaccione, G., Calarco, R., Picozzi, S., Bertacco, R.
Publikováno v:
Advanced Materials 28, 560 (2016)
GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors. In nice agreement with first principle calculations, we show by angu
Externí odkaz:
http://arxiv.org/abs/1412.2386
We experimentally studied the Josephson supercurrent in Nb/InN-nanowire/Nb junctions. Large critical currents up to 5.7 $\mu$A have been achieved, which proves the good coupling of the nanowire to the superconductor. The effect of a magnetic field pe
Externí odkaz:
http://arxiv.org/abs/1001.2380
We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent tran
Externí odkaz:
http://arxiv.org/abs/0802.4175
We investigate phase-coherent transport in InN nanowires of various diameters and lengths. The nanowires were grown by means of plasma-assisted molecular beam epitaxy. Information on the phase-coherent transport is gained by analyzing the characteris
Externí odkaz:
http://arxiv.org/abs/0802.4014