Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Cajetan Wagner"'
Publikováno v:
IEEE Transactions on Electron Devices. 52:1067-1071
Modern bipolar transistors use polysilicon emitters and an epitaxial grown silicon germanium (SiGe) base. For device optimization, both the SiGe base and the region of the diffused emitter is of special interest. In this paper, electron holography is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6918f0256aea45e2834dc67889e0ad47
https://doi.org/10.1109/ted.2005.848123
https://doi.org/10.1109/ted.2005.848123
Autor:
Andreas Pribil, Knut Stahrenberg, Cajetan Wagner, Axel Junge, Claus Dahl, Armin Tilke, Bernd Föste, J. Berkner, Martin Tegeler, Markus Rochel, Jörg Wiedemann, Steffen Rothenhäußer, Klaus Goller
Publikováno v:
Solid-State Electronics. 48:2243-2249
We present a modular 0.25 μm ASIC-compatible, double-poly self-aligned BiCMOS technology comprising either an implanted-base 45 GHz bipolar transistor or a 80 GHz-HBT with selective SiGe-epitaxy. All passive devices for RF-design are integrated, inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee0ed18afae92067ae290f0ad971fac
https://doi.org/10.1016/j.sse.2004.04.014
https://doi.org/10.1016/j.sse.2004.04.014
Autor:
Armin Tilke, Jörg Wiedemann, S. Rothenhausser, Claus Dahl, Knut Stahrenberg, Cajetan Wagner, M. Rochel, J. Berkner
Publikováno v:
IEEE Transactions on Electron Devices. 51:1101-1107
We present a low-cost concept for a self-aligned SiGe heterojunction bipolar transistor (HBT). In conventional double-poly HBTs, the base link is formed by use of a sacrificial layer to grow the SiGe epitaxy between an external base polysilicon and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25ffefc13218379a5339f8af0541a146
https://doi.org/10.1109/ted.2004.829879
https://doi.org/10.1109/ted.2004.829879
Publikováno v:
2011 IEEE International Integrated Reliability Workshop Final Report.
The effect of plasma process induced charging of remote circuit blocks and consequently the reliability damage on a single MOS transistor which is connected to such a circuit block is demonstrated for the first time. Traditional methods of characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85902b6bbf097fa77772561a6d44daf8
https://doi.org/10.1109/iirw.2011.6142594
https://doi.org/10.1109/iirw.2011.6142594
Autor:
Barbara Kuhn-Heinrich, Marc Strasser, Lincoln O'Riain, Stefano Aresu, Matthias Stecher, Alevtina Mayerhofer, Birgit von Ehrenwall, Cajetan Wagner, Ralf Rudolf, Paul Kuepper, Andreas von Ehrenwall, Karl-Heinz Gebhardt, Ulrich Glaser
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
In this paper a 130 nm BCD technology platform is presented. The process offers logic-devices, flash-devices and high voltage devices with rated voltages up to 60 V. There are HV analog devices with variable channel length and HV power devices with l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fce1e8838b46d15db466559b922d9ea
https://doi.org/10.1109/ispsd.2011.5890780
https://doi.org/10.1109/ispsd.2011.5890780
Publikováno v:
Springer Proceedings in Physics ISBN: 9783540319146
A bipolar transistor with a silicon-germanium base (HBT) was prepared by the focused ion beam technique for TEM-cross-sectioning, taking into account the special requirements of electron holography. A line plot from the phase image through the functi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ed4f21dae6d4ce37c3fc83da8ebe77
https://doi.org/10.1007/3-540-31915-8_94
https://doi.org/10.1007/3-540-31915-8_94
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23:1877
A detailed investigation of in situ-doped polysilicon emitters with interfacial oxide employed in implanted-base Si bipolar junction and epitaxial-base silicon/germanium (SiGe) heterojunction bipolar transistors is presented. In order to tune and con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8705c56a958ce417c4014b018010db8e
https://doi.org/10.1116/1.2006134
https://doi.org/10.1116/1.2006134