Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Caixuan Fan"'
Publikováno v:
IEEE Electron Device Letters. 40:1949-1952
In this letter, high-performance thin-film transistors (TFTs), with indium oxide (In2O3) as front channel layer, high permittivity ZrO2 as dielectric layer, and aluminum oxide (Al2O3) as passivation layers were integrated by a fully solution process.
Autor:
Caixuan Fan, Zhen Wang, You Meng, Fukai Shan, Guoxia Liu, Youchao Cui, Dejun Feng, Byoungchul Shin
Publikováno v:
Nanoscale. 10:14712-14718
One-dimensional (1D) nanofibers have been considered to be important building blocks for nano-electronics due to their superior physical and chemical properties. In this report, high-performance zinc tin oxide (ZnSnO) nanofibers with various composit
Publikováno v:
Ceramics International. 43:15194-15200
High permittivity (high k) metal-oxide thin films fabricated via solution processes have recently received much attention for the construction of low-operating voltage and high-performance thin-film transistors (TFTs). In this report, amorphous ytter
Publikováno v:
IEEE Transactions on Electron Devices. 64:4137-4143
In this paper, high-k strontium oxide (SrOx) dielectric thin films were fabricated using simple and low-cost solution process. The formation and properties of SrOx thin films annealed at various temperatures (400 °C, 500 °C, 600 °C, and 700 °C) w
Autor:
Zhen, Wang, You, Meng, Youchao, Cui, Caixuan, Fan, Guoxia, Liu, Byoungchul, Shin, Dejun, Feng, Fukai, Shan
Publikováno v:
Nanoscale. 10(30)
One-dimensional (1D) nanofibers have been considered to be important building blocks for nano-electronics due to their superior physical and chemical properties. In this report, high-performance zinc tin oxide (ZnSnO) nanofibers with various composit