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pro vyhledávání: '"Caiwen, Yuan"'
Autor:
Ruby Vollrath, Corey Senowitz, Hieu Nguyen, Lesly Endrinal, Caiwen Yuan, Lavakumar Ranganathan
Publikováno v:
International Symposium for Testing and Failure Analysis.
Defect localization has become more complicated in the FinFET era. As with planar devices, it is still generally possible to electrically isolate a failure down to a single transistor. However, the complexity of certain FinFET devices can lead to amb
Publikováno v:
International Symposium for Testing and Failure Analysis.
Current VLSI devices have very complicated circuit designs and very small feature size. As a result, fault isolation on failing devices becomes a more and more challenging task. Although backside photoemission technique is commonly used to detect the
Publikováno v:
International Symposium for Testing and Failure Analysis.
Focused Ion Beam (FIB) has been widely accepted in circuit modification and debugging of new chips and process technologies [1]. It has the advantages of rapid confirmation of design fixes and reducing the cost and time to build new masks. In this pa
Publikováno v:
Chinese Physics Letters. 4:529-532
We briefly describe our results to date on the magnetron sputtering deposition of BaxY1+xCuO3-y thin films with Tc onset=96K and TR=0=83K. We emphasize the importance of the characteristics of the substrate material. The perovskite-SrTiO3 substrate d
Autor:
Xizhi, Li, Caibing, Yang, Xiaoneng, Cao, Xizeng, Fang, Xiangqing, Shi, Shuqin, Li, Yizhi, Qi, Bairu, Zhao, Caiwen, Yuan, Yinzi, Zhang, Yuying, Zhao, Yong, Lu, Huisheg, Wang, Yinhuan, Shi, Ju, Gao, Lin, Li
Publikováno v:
International Journal of Infrared and Millimeter Waves; March 1989, Vol. 10 Issue: 3 p445-456, 12p
Akademický článek
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Autor:
Huisheng, Wang, Lin, Li, Bairu, Zhao, Yong, Lu, Yinhuan, Shi, Yuying, Zhao, Caiwen, Yuan, Ju, Gao
Publikováno v:
Chinese Physics Letters; Jan1988, Vol. 5 Issue 1, p1-1, 1p