Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Caitlin A. Chapin"'
Autor:
Caitlin A. Chapin, Anand Vikas Lalwani, Savannah R. Eisner, Debbie G. Senesky, Hannah S. Alpert, Ananth Saran Yalamarthy, Maximillian Holliday
Publikováno v:
IEEE Sensors Journal. 22:1245-1251
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3097c6a7a9e8d2222ca7f16c52cf9d29
https://doi.org/10.1109/jsen.2021.3130527
https://doi.org/10.1109/jsen.2021.3130527
Autor:
Caitlin A. Chapin, Udo Ausserlechner, Debbie G. Senesky, Kenneth E. Goodson, Helmut Kock, Karen M. Dowling, Tanya Liu, Hannah S. Alpert, Savannah R. Eisner, Peter F. Satterthwaite, Ananth Saran Yalamarthy, Mehdi Asheghi
Publikováno v:
Journal of Microelectromechanical Systems. 29:669-676
This article presents GaN two-dimensional electron gas (2DEG) Hall plates with low residual offset and noise at 3 V input bias. We studied devices made from three consecutive fabrication generations through current spinning offset measurements in a z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81bedbb9deaded16ea1d8af4b900f21c
https://doi.org/10.1109/jmems.2020.3013187
https://doi.org/10.1109/jmems.2020.3013187
Autor:
Kaoru Porter, Simon S. Ang, Ruiqi Chen, Debbie G. Senesky, Ardalan Nasiri, Caitlin A. Chapin, Tom Cannon, Errol V. Porter
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 17:59-66
An electronic packaging technology that survives the simulated Venusian surface temperature of 465°C and 96 bar pressure in carbon dioxide (CO2) and nitrogen environments, without the corrosive trace gases, was developed. Alumina ceramic substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaaa13ee5c0cbfd1415c7ca1cc265255
https://doi.org/10.4071/imaps.1115241
https://doi.org/10.4071/imaps.1115241
Autor:
Caitlin A. Chapin, Helmut Kock, Udo Ausserlechner, Ananth Saran Yalamarthy, Hannah S. Alpert, Savannah R. Benbrook, Karen M. Dowling, Debbie G. Senesky
Publikováno v:
IEEE Sensors Journal. 19:3640-3646
The effect of metal contact lengths on current- and voltage-scaled sensitivities and magnetic field offsets of octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were examined in this work. The calculations that take into account the shape of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0cc7f5f3811c9c0b14e51e7c1c34c56
https://doi.org/10.1109/jsen.2019.2895546
https://doi.org/10.1109/jsen.2019.2895546
Autor:
Caitlin A. Chapin, Debbie G. Senesky, Saleh Kargarrazi, Ananth Saran Yalamarthy, Peter F. Satterthwaite, Scott William Blankenberg
Publikováno v:
IEEE Journal of the Electron Devices Society. 7:931-935
Extreme environments such as the Venus atmosphere are among the emerging applications that demand electronics that can withstand high-temperature oxidizing conditions. While wide-bandgap technologies for integrated electronics have been developed so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3e028674f8ff6f2c85d3af4afb65c5f
https://doi.org/10.1109/jeds.2019.2937008
https://doi.org/10.1109/jeds.2019.2937008
Autor:
Hannah S. Alpert, Sara Port, Peter F. Satterthwaite, Simon S. Ang, Ardalan Nasiri, Debbie G. Senesky, Caitlin A. Chapin, Ananth Saran Yalamarthy, Savannah R. Eisner
Publikováno v:
2021 IEEE Aerospace Conference (50100).
Further development of harsh environment electronics capable of uncooled operation under Venus surface atmospheric conditions (~460°C, ~92 bar, corrosive) would enable future missions to the surface of Venus to operate for up to a year. Wide band-ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b1bd12bca71069d9995268a3ccc1a88
https://doi.org/10.1109/aero50100.2021.9438131
https://doi.org/10.1109/aero50100.2021.9438131
Publikováno v:
Journal of Applied Physics. 131:155701
The electrical and structural characteristics of 50-nm-thick zinc oxide (ZnO) metal-semiconductor-metal ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. The devices were irradiated w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea91eed46d0f198e3ae13974ad66005c
https://doi.org/10.1063/5.0077210
https://doi.org/10.1063/5.0077210
Autor:
Jiya Janowitz, Sai Kumar, Brandon Yeung, Debbie G. Senesky, Ricardo Peterson, Hannah S. Alpert, Karen M. Dowling, Caitlin A. Chapin, Jhorge Lopez, Max Holliday
Publikováno v:
2020 IEEE SENSORS.
Every transformer has a core that produces a powerful AC magnetic field while in operation, which can be measured to monitor the health and performance of the transformer in real time. However, the environment inside of a bucket transformer presents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f0a804beb3a22d9be245472855d2d5e
https://doi.org/10.1109/sensors47125.2020.9278866
https://doi.org/10.1109/sensors47125.2020.9278866
Autor:
Caitlin A. Chapin, Debbie G. Senesky, Ricardo Peterson, Srabanti Chowdhury, Mohamadali Malakoutian, Xiaoqing Xu
Publikováno v:
Physical Review B. 102
Here we present an analysis of the mobility-limiting mechanisms of a two-dimensional hole gas on hydrogen-terminated diamond surfaces. The scattering rates of surface impurities, surface roughness, non-polar optical phonons, and acoustic phonons are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9be3a1bbfacf378680547a9d7518a9e6
https://doi.org/10.1103/physrevb.102.075303
https://doi.org/10.1103/physrevb.102.075303
Publikováno v:
Sensors and Actuators A: Physical. 263:216-223
A micro-scale pressure sensor leveraging a ring-shaped In0.17Al0.83N/GaN high electron mobility transistor (HEMT) sensing element was fabricated and characterized under applied pressure. The device design uses InAlN/GaN-on-Si as the material platform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc407929e0ba7c34b210fb61ed5b131f
https://doi.org/10.1016/j.sna.2017.06.009
https://doi.org/10.1016/j.sna.2017.06.009