Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Caijing Cheng"'
Autor:
Junjie Si, Caijing Cheng
Publikováno v:
Physica B: Condensed Matter. 406:3098-3100
The effects of inductively coupled plasma (ICP) etching on electrical properties of Pt/Au–Al0.45Ga0.55N Schottky contacts are investigated. There are two linear parts in the ln I–V curves of ICP-etched Schottky contacts at small forward currents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b45d433b384d25823d3bb21c06b927e7
https://doi.org/10.1016/j.physb.2011.05.014
https://doi.org/10.1016/j.physb.2011.05.014
Publikováno v:
SPIE Proceedings.
InSb is an important Ⅲ-Ⅴnarrow gap compound semiconductor material. It is widely used in optoelectronic devices manufacture especially mid-wave infrared detectors. With the application of ICP etching in large-scale InSb IRFPA detectors fabricatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23f597ab824bc5b46386096505535c3a
https://doi.org/10.1117/12.2071936
https://doi.org/10.1117/12.2071936
Autor:
Caijing Cheng, Junjie Si
Publikováno v:
SPIE Proceedings.
Thermal annealing effect on electrical properties of the Pt/Al 0.45 Ga 0.55 N Schottky contacts is investigated. The ideality factor, barrier height, and series resistance are obtained from the forward I-V characteristics of the Pt/Al 0.45 Ga 0.55 N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1551c24a9e02adb07d7485bfd3991f3
https://doi.org/10.1117/12.975823
https://doi.org/10.1117/12.975823
Publikováno v:
SPIE Proceedings.
Au-Al 0.30 Ga 0.70 N Lateral Schottky photodiode was fabricated by an electrical breakdown of a single Schottky barrier of metal-semiconductor-metal Au-Al 0.30 Ga 0.70 N film rocking curves are about 523.7 arcsec for the (00.2) plane reflection and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78766d204a44bfa6e24792653643c743
https://doi.org/10.1117/12.834560
https://doi.org/10.1117/12.834560
Publikováno v:
Optoelectronic Devices and Integration II.
Platinum was deposited on unintentionally doped n-Al x Ga 1-x N films grown by metal-organic chemical vapor deposition (MOCVD) to form MSM ultraviolet photodetectors. All devices were annealed for 10 min at different temperature in N 2 ambient. Resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::500acb97a5c30710fde387df0ff0953a
https://doi.org/10.1117/12.756558
https://doi.org/10.1117/12.756558
Autor:
Zhixin Qin, Zheng-Yu Xu, Caijing Cheng, Yan-Zhao Zhang, Guoyi Zhang, Liwen Sang, Xiang-Feng Zhang, Bo Shen, Lan Zhao, Wei-Guo Sun
Publikováno v:
Chinese Physics Letters. 27:127304
Mg-doped AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD) using an indium-assisted growth method. At room temperature, the resistivity of Mg-doped Al0.43Ga0.57N epilayer grown under indium (I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c015ea5d3f538d50fcef33b06c6ab177
https://doi.org/10.1088/0256-307x/27/12/127304
https://doi.org/10.1088/0256-307x/27/12/127304