Zobrazeno 1 - 10
of 16
pro vyhledávání: '"CaiZhen Zhang"'
Publikováno v:
2022 IEEE 5th International Conference on Automation, Electronics and Electrical Engineering (AUTEEE).
Publikováno v:
2021 IEEE International Conference on Advances in Electrical Engineering and Computer Applications (AEECA).
In order to overcome the disadvantages of poor edge processing effect of bilinear interpolation algorithm and blurry image details in traditional image correction, an improved directional polynomial interpolation algorithm is proposed. algorithm firs
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 15:2100316
Publikováno v:
Polymers for Advanced Technologies. 29:914-920
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1167:012010
In order to heighten their near infrared light-sensitive characteristics, lead phthalocyanine (PbPc) phototransistors were prepared by vacuum evaporation at various substrate temperatures (Ts) of 60°C, 100°C, 140°C and 180°C. The crystalline text
Autor:
Junfeng Tong, Feng Wang, Chunyan Yang, Caizhen Zhang, Yangjun Xia, Jianfeng Li, Dejia Chen, Peng Zhang, Qiang Su
Publikováno v:
Polymer Journal. 47:803-809
Alternating and random low band gap conjugated copolymers with dialkyloxy flanked-dithieno[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]dithiophene derivatives (DTBDTs) as electron donor moieties and 5,6-di(dodecyloxy)-2,1,3-benzothiadiazole (BT) as ele
Publikováno v:
Science China Information Sciences. 55:962-970
The breakdown mechanism of power bipolar static induction transistor (BSIT) with buried gate structure is analyzed in depth. A power BSIT sample with high voltage-resistant capability has been designed and fabricated in this paper. The technological
Publikováno v:
Materials Science in Semiconductor Processing. 13:209-213
The Continuously Variable Temperature Phosphorous Gettering process using a Porous Silicon Layer (PSL-CVTPG) was proposed. PSL-CVTPG process can getter unwanted impurities from Solar-Grade silicon (SOG-Si) wafers and upgrade photovoltaic properties o
Publikováno v:
Science China Information Sciences. 53:1089-1096
The radiation-hardened performances of static induction transistor (SIT) have been studied in depth in this paper. The effects of radiation of electron beam on the I-V characteristics, carrier distribution and potential distribution in the channel of
Publikováno v:
Proceedings of the 2016 5th International Conference on Environment, Materials, Chemistry and Power Electronics.
Although having advantages of high integration, Low power consumption and strong processing capability, etc., it is not easy for SDRAM to be developed and applied because of its timing complexity. To reduce costs, and shorten the development period,