Wavelength tunable InAs/InP(1 0 0) quantum dots in 1.55-μm telecom devices

Autor: Anantathanasarn, S., Barbarin, Y., Cade, N.I., van Veldhoven, P.J., Bente, E.A.J.M., Oei, Y.S., Kamada, H., Smit, M.K., Nötzel, R.

Publikováno v: In Materials Science & Engineering B 2008 147(2):124-130

1.55-μm range InAs/InP (100) quantum dot telecom devices

Autor: Nötzel, R., Anantathanasarn, S., Veldhoven, van, P.J., Barbarin, Y., Bente, E.A.J.M., Smit, M.K., Cade, N.I., Kamada, H., Satpati, B., Trampert, A., Dhar, N.K., Dutta, A.K., Islam, M.S.

Publikováno v: Nanophotonics for Communication: Materials, Devices, and Systems IV, 677904-1/10
STARTPAGE=677904;ENDPAGE=1/10;TITLE=Nanophotonics for Communication: Materials, Devices, and Systems IV

Lasing and sharp line emission in the 1.55-μm wavelength region is demonstrated from ensembles and single InAs quantum dots (QDs) embedded in InGaAsP on InP (100) by metalorganic vapor phase epitaxy (MOVPE). Wavelength tuning of the QDs is achieved

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf8c4ab9aa2bd2a93c445814c4015774
https://doi.org/10.1117/12.731341

Important factors determining the nanoscale tracking precision of dynamic microtubule ends.

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