Zobrazeno 1 - 10
of 653
pro vyhledávání: '"Cabrini S"'
Autor:
Riminucci, F., Ardizzone, V., Francaviglia, L., Lorenzon, M., Stavrakas, C., Dhuey, S., Schwartzberg, A., Zanotti, S., Gerace, D., Baldwin, K., Pfeiffer, L. N., Gigli, G., Ogletree, D. F., Weber-Bargioni, A., Cabrini, S., Sanvitto, D.
Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light w
Externí odkaz:
http://arxiv.org/abs/2205.05722
Publikováno v:
Journal of the European Optical Society-Rapid Publications, Vol 9, p 14006 (2014)
In this paper, experimental evidences about the resonance phenomena in a negative 2D photonic crystal are shown. Localized plasmon-like modes and guided mode resonances are detected in the reflectivity spectrum of a photonic crystal slab irradiated w
Externí odkaz:
https://doaj.org/article/635119c2770b4dc3bbbee349fa1dd661
Using a combination of first-principles theory and experiments, we provide a quantitative explanation for chemical contributions to surface-enhanced Raman spectroscopy for a well-studied organic molecule, benzene thiol, chemisorbed on planar Au(111)
Externí odkaz:
http://arxiv.org/abs/1011.1873
Autor:
Weis, C. D., Schuh, A., Batra, A., Persaud, A., Rangelow, I. W., Bokor, J., Lo, C. C., Cabrini, S., Olynick, D., Duhey, S., Schenkel, T.
We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lev
Externí odkaz:
http://arxiv.org/abs/0809.2113
Autor:
Weis, C. D., Schuh, A., Batra, A., Persaud, A., Rangelow, I. W., Bokor, J., Lo, C. C., Cabrini, S., Sideras-Haddad, E., Fuchs, G. D., Hanson, R., Awschalom, D. D., Schenkel, T.
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is
Externí odkaz:
http://arxiv.org/abs/0806.2167
Autor:
Batra, A., Weis, C. D., Reijonen, J., Persaud, A., Cabrini, S., Lo, C. C., Bokor, J., Schenkel, T.
We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar,
Externí odkaz:
http://arxiv.org/abs/0709.4056
Autor:
Riboli, F., Recati, A., Daldosso, N., Pavesi, L., Pucker, G., Lui, A., Cabrini, S., Di Fabrizio, E.
We present a numerical analysis and preliminary experimental results on one-dimensional Fabry-Perot micro-cavities in Si$_3$N$_4$ waveguides. The Fabry-Perot micro-cavities are formed by two distributed Bragg reflectors separated by a straight portio
Externí odkaz:
http://arxiv.org/abs/cond-mat/0509779
Autor:
Bollani, M., Giliberti, V., Sakat, E., Baldassarre, L., Celebrano, M., Frigerio, J., G.Isella, Finazzi, M., Melli, M., Weber-Bargioni, A., Cabrini, S., Biagioni, P., Ortolani, M.
Publikováno v:
In Microelectronic Engineering 15 June 2016 159:164-168
Autor:
Giliberti, V., Sakat, E., Baldassarre, L., Di Gaspare, A., Notargiacomo, A., Giovine, E., Frigerio, J., Isella, G., Melli, M., Weber-Bargioni, A., Aloni, S., Sassolini, S., Cabrini, S., Biagioni, P., Ortolani, M., Bollani, M.
Publikováno v:
In Microelectronic Engineering 15 June 2015 141:168-172
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