Hysteresis suppression improvement of polycrystalline silicon thin-film transistors by two-step hydrogenation

Autor: Wj Hwang Wook-Jung Hwang, Cw Ahn Chi Won Ahn, J-M Yang, Hs Seo Hyun-Sang Seo, Ys Kim Young-Su Kim, Is Kang Il-Suk Kang

Publikováno v: Current Applied Physics. 11:1319-1321

The effect of two-step hydrogenation, consisting of plasma hydrogenation and annealing in hydrogen, on the hysteresis phenomenon of metal-induced unilaterally crystallized silicon thin-film transistors (MIUC-Si TFTs) was investigated. The large hyste

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5ef74826758aef929e75255e4658d1b5
https://doi.org/10.1016/j.cap.2011.03.067

The Effect of Losing Abdominal Fat on the Progression of Carotid Intima Media Thickness in Patients with Type 2 Diabetes

Autor: JS Nam, WH Shim, EH Lee, SH Beom, SA Kim, ES Kim, JS Yoo, M Cho, JS Park, CW Ahn, BS Cha, EJ Lee, SK Lim, KR Kim, HC Lee

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::014d9717990094dce5117827e17a0faa
https://doi.org/10.1210/endo-meetings.2010.part2.p11.p2-521

Abstract: P878 ASSOCIATION BETWEEN C609T VARIANT IN NQO1 AND CAROTID ARTERY PLAQUES IN PATIENTS WITH TYPE 2 DIABETES

Autor: HC Lee, CW Ahn, BS Cha, M Nam, ES Kang, HJ Kim, SH Kim, SJ Han

Publikováno v: Atherosclerosis Supplements. 10:e1023

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::baf21274a0149c5d58bdd94a4fc0d2d2
https://doi.org/10.1016/s1567-5688(09)70999-7

ProtonationDriven Polarization Retention Failure in Nano-Columnar Lead-Free Ferroelectric Thin Films.

Autor: Sheeraz M; Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea., Ahn CW; Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea., Duong NX; Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea., Hwang SY; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea., Jang JS; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea., Kim EY; Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea., Kim YK; Department of Physics, Sogang University, Seoul, 04107, Republic of Korea., Lee J; Busan Center, Korea Basic Science Institute (KBSI), Busan, 46742, Republic of Korea., Jin JS; Busan Center, Korea Basic Science Institute (KBSI), Busan, 46742, Republic of Korea., Bae JS; Busan Center, Korea Basic Science Institute (KBSI), Busan, 46742, Republic of Korea., Lee MH; School of Materials Science and Engineering, Changwon National University, Gyeongnam, 51140, Republic of Korea., Han HS; School of Materials Science and Engineering, University of Ulsan, Ulsan, 44776, Republic of Korea., Kim GY; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea., Cho S; Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea., Song TK; School of Materials Science and Engineering, Changwon National University, Gyeongnam, 51140, Republic of Korea., Yang SM; Department of Physics, Sogang University, Seoul, 04107, Republic of Korea., Bu SD; Department of Physics, Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju, 54896, Republic of Korea., Baek SH; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.; Division of Nano & Information Technology, KIST School, University of Science and Technology, Seoul, 02792, Republic of Korea., Choi SY; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea.; Center for Van der Waals Quantum Solids, Institute for Basic Science, Pohang, 37673, Republic of Korea.; Department of Semiconductor Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea., Kim IW; Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea., Kim TH; Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan, 44610, Republic of Korea.; Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea.

Publikováno v: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2024 Nov 03, pp. e2408784. Date of Electronic Publication: 2024 Nov 03.

Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature.

Autor: Choi J; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Park J; Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea. jungmin0123@kaist.ac.kr., Noh S; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Lee J; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Lee S; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Choe D; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.; Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, Korea., Jung H; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Jo J; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Oh I; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Han J; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Kwon SY; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Ahn CW; Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan, Republic of Korea., Min BC; Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, Korea., Jin H; Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Kim CH; Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, Republic of Korea. chkim82@snu.ac.kr.; Department of Physics and Astronomy, Seoul National University, Seoul, Korea. chkim82@snu.ac.kr.; Korea Institute for Advanced Study, Seoul, Korea. chkim82@snu.ac.kr., Kim KW; Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, Korea. kwkim@yonsei.ac.kr.; Department of Physics, Yonsei University, Seoul, Korea. kwkim@yonsei.ac.kr., Yoo JW; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea. jwyoo@unist.ac.kr.; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea. jwyoo@unist.ac.kr.

Publikováno v: Nature communications [Nat Commun] 2024 Oct 09; Vol. 15 (1), pp. 8746. Date of Electronic Publication: 2024 Oct 09.