Výsledky vyhledávání - "COQ GERMANICUS, R."

Akademický článek

SiC Doping Impact during Conducting AFM under Ambient Atmosphere.

Autor: Villeneuve-Faure C; LAPLACE (Laboratoire Plasma et Conversion d'Energie), Université de Toulouse, CNRS, UPS, INPT, 118 Route de Narbonne, CEDEX 9, 31062 Toulouse, France., Boumaarouf A; CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France., Shah V; School of Engineering, University of Warwick, Coventry CV4 7AL, UK., Gammon PM; School of Engineering, University of Warwick, Coventry CV4 7AL, UK., Lüders U; CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France., Coq Germanicus R; CRISMAT UMR6508 (Laboratoire de Cristallographie et Sciences des Matériaux), Normandie University, Ensicaen, Unicaen, CNRS, 14000 Caen, France.

Publikováno v: Materials (Basel, Switzerland) [Materials (Basel)] 2023 Aug 01; Vol. 16 (15). Date of Electronic Publication: 2023 Aug 01.

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Akademický článek

Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

Autor: Coq Germanicus, R., Picard, E., Domenges, B., Danilo, K., Rogel, R.

Publikováno v: In Applied Surface Science 2007 253(14):6006-6012

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Akademický článek

Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment.

Autor: Niskanen, K.¹ kimmo.niskanen@ies.univ-montp2.fr, Coq Germanicus, R.², Michez, A.¹, Wrobel, F.¹, Boch, J.¹, Saigne, F.¹, Touboul, A. D.¹ antoine.touboul@umontpellier.fr

Publikováno v: IEEE Transactions on Nuclear Science. Aug2021, Vol. 68 Issue 8, p1623-1632. 10p.

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Akademický článek

On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon.

Autor: Coq Germanicus, R., Leclère, Ph., Guhel, Y., Boudart, B., Touboul, A. D., Descamps, P., Hug, E., Eyben, P.

Publikováno v: Journal of Applied Physics; 6/28/2015, Vol. 117 Issue 24, p244306-1-244306-10, 10p, 1 Diagram, 12 Graphs

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Aging and Gate Bias Effects on TID Sensitivity of Wide Bandgap Power Devices

Autor: Niskanen, K., Touboul, A. D., Coq Germanicus, R., Michez, A., Wrobel, F., Boch, J., Pouget, V., Saigné, F.

Publikováno v: IEEE RADECS2018
IEEE RADECS2018, Sep 2018, Goteborg, Sweden

The effect of oxide stress on the total ionizing dose (TID) radiation sensitivity of silicon carbide (SiC) power MOSFETS and TID sensitivity of gallium nitride (GaN) power transistor is reported. Difference in TID response for stressed and unstressed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2089f21f44aa2f4ddecad6d5d8aeb94a
https://hal.archives-ouvertes.fr/hal-02086450

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Akademický článek

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy.

Autor: Coq Germanicus R; Normandie Université, ENSICAEN, UNICAEN, CNRS, CRISMAT, 14000 Caen, France., De Wolf P; Bruker Nano Surfaces, 112 Robin Hill Road, CA 93117, Santa Barbara, USA., Lallemand F; Murata Integrated Passive Solutions, 2 Rue de la Girafe, 14000 Caen, France., Bunel C; Murata Integrated Passive Solutions, 2 Rue de la Girafe, 14000 Caen, France., Bardy S; NXP Semiconductors, Esplanade Anton Philips 2, 14905, Colombelles, France., Murray H; Normandie Université, ENSICAEN, UNICAEN, CNRS, CRISMAT, 14000 Caen, France., Lüders U; Normandie Université, ENSICAEN, UNICAEN, CNRS, CRISMAT, 14000 Caen, France.

Publikováno v: Beilstein journal of nanotechnology [Beilstein J Nanotechnol] 2020 Nov 23; Vol. 11, pp. 1764-1775. Date of Electronic Publication: 2020 Nov 23 (Print Publication: 2020).

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