Zobrazeno 1 - 10
of 1 149
pro vyhledávání: '"COLLAERT, N"'
Autor:
Agopian, P.G.D., Carmo, G.J., Martino, J.A., Simoen, E., Peralagu, U., Parvais, B., Waldron, N., Collaert, N.
Publikováno v:
In Solid State Electronics November 2021 185
Publikováno v:
In Solid State Electronics September 2020 171
Publikováno v:
In Solid State Electronics April 2019 154:24-30
Autor:
Rahman, R., Lansbergen, G. P., Verduijn, J., Tettamanzi, G. C., Park, S. H., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S.
Publikováno v:
Physical Review B 84, 115428 (2011)
We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-bindin
Externí odkaz:
http://arxiv.org/abs/1107.2701
Autor:
Lansbergen, G. P., Rahman, R., Verduijn, J., Tettamanzi, G. C., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S.
Publikováno v:
Physical Review Letters 107, 136602 (2011)
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the
Externí odkaz:
http://arxiv.org/abs/1008.1381
Quantum coherence is of crucial importance for the applicability of donor based quantum computing. In this Letter we describe the observation of the interference of conduction paths induced by two donors in a nano-MOSFET resulting in a Fano resonance
Externí odkaz:
http://arxiv.org/abs/0912.2196
Autor:
Lansbergen, G. P., Tettamanzi, G. C., Verduijn, J., Collaert, N., Biesemans, S., Blaauboer, M., Rogge, S.
Publikováno v:
Nano Letters 10 (2), 455-460 (2010)
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a Silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are t
Externí odkaz:
http://arxiv.org/abs/0909.5602
Autor:
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S., Rogge, S.
Publikováno v:
Phys. Rev. Lett. 97, 206805 (2006)
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0608159
Autor:
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S., Rogge, S.
Publikováno v:
Appl. Phys. Lett. 90, 073502 (2007)
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded by a gate
Externí odkaz:
http://arxiv.org/abs/cond-mat/0603430
Autor:
Ramesh, S., Ivanov, Ts., Sibaja-Hernandez, A., Alian, A., Camerotto, E., Milenin, A., Pinna, N., El Kazzi, S., Lin, D., Lagrain, P., Favia, P., Bender, H., Collaert, N., De Meyer, K.
Publikováno v:
Journal of Applied Physics; 7/14/2022, Vol. 132 Issue 2, p1-14, 14p