Zobrazeno 1 - 10
of 571
pro vyhledávání: '"CLARK, R. G."'
Autor:
Cassidy, M. C., Dzurak, A. S., Clark, R. G., Petersson, K. D., Farrer, I., Ritchie, D. A., Smith, C. G.
Publikováno v:
Applied Physics Letters, 91, 222104 (2007)
We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth exceeding
Externí odkaz:
http://arxiv.org/abs/0907.1010
Autor:
Morello, A., Escott, C. C., Huebl, H., van Beveren, L. H. Willems, Hollenberg, L. C. L., Jamieson, D. N., Dzurak, A. S., Clark, R. G.
Publikováno v:
Phys. Rev. B 80, 081307(R) (2009)
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor e
Externí odkaz:
http://arxiv.org/abs/0904.1271
Autor:
Lim, W. H., Huebl, H., van Beveren, L. H. Willems, Rubanov, S., Spizzirri, P. G., Angus, S. J., Clark, R. G., Dzurak, A. S.
Publikováno v:
Appl. Phys. Lett. 94, 173502 (2009)
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically
Externí odkaz:
http://arxiv.org/abs/0904.0311
Autor:
van Beveren, L. H. Willems, Huebl, H., McCamey, D. R., Duty, T., Ferguson, A. J., Clark, R. G., Brandt, M. S.
Publikováno v:
Appl. Phys. Lett. 93, 072102 (2008)
We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures,
Externí odkaz:
http://arxiv.org/abs/0805.4244
Autor:
Mitic, M., Petersson, K. D., Cassidy, M. C., Starrett, R. P., Gauja, E., Ferguson, A. J., Yang, C., Jamieson, D. N., Clark, R. G., Dzurak, A. S.
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator
Externí odkaz:
http://arxiv.org/abs/0802.0375
Publikováno v:
Oecologia, 2018 May 01. 187(1), 305-318.
Externí odkaz:
https://www.jstor.org/stable/48719022
Publikováno v:
Phys. Rev. B 77, 100501 (2008)
We use radio-frequency reflectometry to measure quasiparticle tunneling rates in the single-Cooper-pair-transistor. Devices with and without quasiparticle traps in proximity to the island are studied. A $10^2$ to $10^3$-fold reduction in the quasipar
Externí odkaz:
http://arxiv.org/abs/0710.2760
Publikováno v:
Supercond. Sci. Technol. 21, 015013 (2008)
Within the context of superconducting gap engineering, Al-\alox-Al tunnel junctions have been used to study the variation in superconducting gap, $\Delta$, with film thickness. Films of thickness 5, 7, 10 and 30 nm were used to form the small area su
Externí odkaz:
http://arxiv.org/abs/0706.4150
Autor:
Hudson, F. E., Ferguson, A. J., Escott, C. C., Dzurak, A. S., Clark, R. G., Jamieson, D. N., Yang, C.
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by undoped sil
Externí odkaz:
http://arxiv.org/abs/cond-mat/0612507
Autor:
McCamey, D. R., Huebl, H., Brandt, M. S., Hutchison, W. D., McCallum, J. C., Clark, R. G., Hamilton, A. R.
Publikováno v:
Applied Physics Letters 89, 182115 (2006)
We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which P
Externí odkaz:
http://arxiv.org/abs/cond-mat/0605516