Zobrazeno 1 - 10
of 15
pro vyhledávání: '"CHAN-CHING CHANG"'
Autor:
Chan-Ching Chang, 張展晴
94
In this thesis, we report on the fabrication of multilayer organic light emitting diodes (OLEDs) with high electroluminescent (EL) yield by integrating two units of green and whit emissive devices in series. We also demonstrate p-i-n organic
In this thesis, we report on the fabrication of multilayer organic light emitting diodes (OLEDs) with high electroluminescent (EL) yield by integrating two units of green and whit emissive devices in series. We also demonstrate p-i-n organic
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/v5dmyp
Autor:
Chan-Ching Chang, 張展晴
88
The purpose of this thesis is to study some important issues for Zn ion implantation. Three primary issues are studied: structure damage caused by ion implantation, activated as the p-type GaN by rapid thermal annealing (RTA) and furnace trea
The purpose of this thesis is to study some important issues for Zn ion implantation. Three primary issues are studied: structure damage caused by ion implantation, activated as the p-type GaN by rapid thermal annealing (RTA) and furnace trea
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/55049772533441687137
Autor:
Kuo Hsi Yen, Jenn-Fang Chen, Ching Chieh Shih, Yeong Shyang Lee, Ming Ta Hsieh, Hsiao-Wen Zan, Chih Hsien Chen, Chan Ching Chang
Publikováno v:
Japanese Journal of Applied Physics. 47:8714-8718
Detailed admittance spectroscopy was performed on a metal–silicon nitride–hydrogenated amorphous silicon (MIAS) structure. On the basis of the properties of hydrogenated amorphous silicon (a-Si:H), three simplified equivalent circuit models under
Publikováno v:
Analytical Sciences: X-ray Structure Analysis Online. 20:X37-X38
Tris(5-N-ethylanilinesulfonamide-8-quinolato)aluminum(III), Al(Saq)3, was crystallized in P21/c with a = 17.952(3)A, b = 17.716(3)A, c = 17.080(3)A, β = 99.895(4)°, V = 5351.5(16)A3, Z = 4. The tris-chelate of Al(Saq)3 has a symmetry of C1 and a ge
Autor:
Yi-Ya Tseng, Chan-Ching Chang, Kun-Fu Huang, Chih-Yuan Hou, Ya-Hui Peng, Chih Hsien Chen, Yeong-Shyang Lee, Tzung-Shi Huang
Publikováno v:
SID Symposium Digest of Technical Papers. 39:333
A 32-inch microcrystalline silicon thin film transistor liquid crystal display was manufactured on 1500×1850 mm2 (G6) glass substrate. We have successfully deposited non-porous and highly crystalline microcrystalline silicon film with interfacial tr
Akademický článek
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Publikováno v:
Applied Physics Letters. 89:253504
In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (2-TNATA) to replace th
Publikováno v:
Applied Physics Letters. 89:103510
The effect of tungsten oxide (WO3) incorporation into 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectrosco
Publikováno v:
SID Symposium Digest of Technical Papers. 37:964
P-i-n Devices with 2% Cs2CO3 doped BPhen as the n-type transporting layer and WO3 doped triphenylamine derivatives as the p-type transporting layer, coupled with a modified composition of sky blue DSA doped MADN and yellow rubrene doped NPB emitters,