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of 418
pro vyhledávání: '"CARUSO, ANTONIO"'
Thermal transient measurement based on source-drain voltage is a standard method to characterize thermal properties of silicon semiconductors but is doubtful to be directly applied to silicon carbide (SiC) devices. To evaluate its feasibility and lim
Externí odkaz:
http://arxiv.org/abs/2211.15174
Autor:
Epifani, Lorenzo, Caruso, Antonio
Publikováno v:
In Smart Agricultural Technology December 2024 9
Publikováno v:
In Marine and Petroleum Geology December 2024 170
Autor:
Caruso, Antonio, Nikita, Efthymia
Publikováno v:
In Journal of Archaeological Science: Reports February 2025 61
Autor:
Caruso, Antonio, Nikita, Efthymia
Publikováno v:
In Journal of Archaeological Science: Reports June 2024 56
Publikováno v:
In Simulation Modelling Practice and Theory May 2024 133
Autor:
Javanmardi, Saeed, Ghahramani, Meysam, Shojafar, Mohammad, Alazab, Mamoun, Caruso, Antonio M.
Publikováno v:
In Computers & Security May 2024 140
Autor:
Caruso, Antonio, Nikita, Efthymia
Publikováno v:
In International Journal of Paleopathology March 2024 44:10-19
Autor:
Addante, Marina, Maiorano, Patrizia, Scopelliti, Giovanna, Girone, Angela, Marino, Maria, Trotta, Samanta, Caruso, Antonio
Publikováno v:
In Palaeogeography, Palaeoclimatology, Palaeoecology 15 January 2024 634
Autor:
Di Capua, Andrea, Miano, Samuele, Campagnolo, Davide, Bonomo, Sergio, Caruso, Antonio, Carugati, Gabriele, Cavallo, Alessandro, Livio, Franz A., Vezzoli, Giovanni
Publikováno v:
In Marine and Petroleum Geology November 2023 157