Zobrazeno 1 - 10
of 25
pro vyhledávání: '"CAO PHUONG THAO"'
Autor:
PHUONG-THAO CAO, CAO PHUONG THAO
107
The nitride-based material had excellent properties such as high thermal conductivity, high electron mobility, high electron saturation velocity, and a wide band gap, which have been considerably studied by many researchers in recent years.
The nitride-based material had excellent properties such as high thermal conductivity, high electron mobility, high electron saturation velocity, and a wide band gap, which have been considerably studied by many researchers in recent years.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/63ysjj
Autor:
Thi Tran Anh Tuan, Dong-Hau Kuo, Cao Phuong Thao, Tran Nguyen Phuong Lan, Nguyen Van Sau, Truong Thi Ngoc Chinh, Co Thi Thuy
Publikováno v:
Journal of Electronic Materials. 51:1288-1296
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d00a6e6348558150182fe612bf9495
https://doi.org/10.1007/s11664-021-09399-1
https://doi.org/10.1007/s11664-021-09399-1
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Publikováno v:
Coatings
Volume 10
Issue 3
Coatings, Vol 10, Iss 3, p 210 (2020)
Volume 10
Issue 3
Coatings, Vol 10, Iss 3, p 210 (2020)
Sb anion-substituted gallium nitride films were fabricated by radio frequency reactive sputtering with single Sb-containing cermet targets with different Sb contents under Ar/N2 atmosphere. n-type GaN films with electron concentration of (1.40 &plusm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59365d472e07647a82b23a6be5c7137b
Publikováno v:
Materials Science in Semiconductor Processing. 82:126-134
Zn acceptor/Ge donor (Zn/Ge)-codoped GaN films with different Zn contents have been deposited on Si substrates at 300 °C and at 90–150 W by RF reactive sputtering technique with cermet targets at the composition atomic ratios of Zn:Ge:(Ga+GaN) at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05759aa9d8ce952d2151f48025e2ff42
https://doi.org/10.1016/j.mssp.2018.04.002
https://doi.org/10.1016/j.mssp.2018.04.002
Autor:
Cao Phuong Thao, Dong–Hau Kuo
Publikováno v:
Materials Science in Semiconductor Processing. 74:336-341
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce8734445de4c4dba771df1f3c20df5a
https://doi.org/10.1016/j.mssp.2017.10.024
https://doi.org/10.1016/j.mssp.2017.10.024
Publikováno v:
Materials Science in Semiconductor Processing. 59:50-55
The Ge-x-GaN thin films were grown on Si (100) substrates by RF reactive sputtering technology with single cermet targets at the Ge/(Ge + Ga) molar ratios of x = 0, 0.03, 0.07 and 1. The Ge-x-GaN films had a wurtzite structure with a preferential ( 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d454615a42625e1fc81ab41e942bfd3d
https://doi.org/10.1016/j.mssp.2016.11.035
https://doi.org/10.1016/j.mssp.2016.11.035
Autor:
Khau Van Nhut, Nguyen Hoang Vu, Cao Phuong Thao, Nguyen Van Sau, Thi Tran Anh Tuan, Dong-Hau Kuo, Thach Thi Via Sa Na, Kim Anh Tuan
Publikováno v:
Coatings
Volume 9
Issue 10
Coatings, Vol 9, Iss 10, p 645 (2019)
Volume 9
Issue 10
Coatings, Vol 9, Iss 10, p 645 (2019)
Ge0.07GaN films were successfully made on Si (100), SiO2/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100&ndash
400 °
C and 90&ndash
150 W with a single
400 °
C and 90&ndash
150 W with a single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43f8c14bf8061822cb92323e4999aac5
Akademický článek
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