Zobrazeno 1 - 10
of 127
pro vyhledávání: '"CAMPOS, L. C."'
Autor:
Pereira, C. L., Cadore, A. R., Rezende, N. P., Gadelha, A., Soares, E. A., Chacham, H., Campos, L. C., Lacerda, R. G.
Publikováno v:
2D Materials, 2019
In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that interaction with H2 leads to local doping of graphene near of the graphene-
Externí odkaz:
http://arxiv.org/abs/2003.02346
Publikováno v:
Communications Physics, volume 2, Article number: 6 (2019)
The development of valleytronics demands long-range electronic transport with preserved valley index, a degree of freedom similar to electron spin. A promising structure for this end is a topological one-dimensional (1D) channel formed in bilayer gra
Externí odkaz:
http://arxiv.org/abs/1901.08178
Akademický článek
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Autor:
CAMPOS, L. C.
Publikováno v:
Repositório Institucional da UFESUniversidade Federal do Espírito SantoUFES.
Made available in DSpace on 2016-08-29T15:07:38Z (GMT). No. of bitstreams: 1 tese_8791_TESE DE DOUTORADO OFICIAL.pdf: 5839192 bytes, checksum: 29bc4fdef242c0cef9581baa9d46a3e4 (MD5) Previous issue date: 2015-09-11
A formação do culto mariano t
A formação do culto mariano t
Externí odkaz:
http://repositorio.ufes.br/handle/10/3559
Autor:
CAMPOS, L. C.
Publikováno v:
Repositório Institucional da UFESUniversidade Federal do Espírito SantoUFES.
Made available in DSpace on 2016-08-29T14:12:02Z (GMT). No. of bitstreams: 1 tese_4627_Ludimila_Caliman_Campos.pdf: 1313304 bytes, checksum: ee45da644dfaa7077b017f93c863395a (MD5) Previous issue date: 2011-04-13
O ano de 198 d.C. é um marco his
O ano de 198 d.C. é um marco his
Externí odkaz:
http://repositorio.ufes.br/handle/10/3458
Autor:
Cadore, A. R., Mania, E., Alencar, A. B., Rezende, N. P., de Oliveira, S., Watanabe, K., Taniguchi, T., Chacham, H., Campos, L. C., Lacerda, R. G.
Publikováno v:
Sensors and Actuators B: Chemical, 2018
Graphene (G) is a two-dimensional material with exceptional sensing properties. In general, graphene gas sensors are produced in field effect transistor configuration on several substrates. The role of the substrates on the sensor characteristics has
Externí odkaz:
http://arxiv.org/abs/1803.10355
Publikováno v:
Applied Physics Letters 2016
We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate the origi
Externí odkaz:
http://arxiv.org/abs/1603.04872
Akademický článek
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Autor:
Campos, L. C., Young, A. F., Surakitbovorn, K., Watanabe, K., Taniguchi, T., Jarillo-Herrero, P.
Publikováno v:
Nature Communications 3, 1239 (2012)
The advent of few-layer graphenes has given rise to a new family of two-dimensional systems with emergent electronic properties governed by relativistic quantum mechanics. The multiple carbon sublattices endow the electronic wavefunctions with pseudo
Externí odkaz:
http://arxiv.org/abs/1210.6020
Autor:
Barbosa, V. C., Campos, L. C. D.
Publikováno v:
Journal of Combinatorial Optimization 8 (2004), 419-437
We introduce a novel evolutionary formulation of the problem of finding a maximum independent set of a graph. The new formulation is based on the relationship that exists between a graph's independence number and its acyclic orientations. It views su
Externí odkaz:
http://arxiv.org/abs/cs/0309038