Zobrazeno 1 - 3
of 3
pro vyhledávání: '"C30B25/14"'
The invention relates to a device and method for the deposition of, in particular, crystalline layers on one or several, in particular, equally crystalline substrates in a process chamber (1), by means of reaction gases which are fed to the process c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=epopatstat__::6fc313bd299a983dcbaddffc6c1b678b
https://register.epo.org/application?number=EP0108105
https://register.epo.org/application?number=EP0108105
The invention relates to a method for depositing III-V semiconductor layers that also contain nitrogen, especially for depositing II-IV compounds, oxides, especially metal oxides. According to the invention, the front face of the gas inlet element an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=epopatstat__::1fd127fbef01a6950d61350b5b4b4623
https://register.epo.org/application?number=EP0210871
https://register.epo.org/application?number=EP0210871