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pro vyhledávání: '"C.X. Qiu"'
Publikováno v:
Land Reclamation in Ecological Fragile Areas ISBN: 9781315166582
Land Reclamation in Ecological Fragile Areas
Land Reclamation in Ecological Fragile Areas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1167ecf3e05fbf732a619c6464f71639
https://doi.org/10.1201/9781315166582-34
https://doi.org/10.1201/9781315166582-34
Akademický článek
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Publikováno v:
Applied Surface Science. :764-767
CdS thin films have been prepared by using chemical bath deposition. The effects of bath temperature and concentration of NH4OH were studied. Optimum deposition conditions were established. The resulted CdS thin films exhibit optical transmissions in
Publikováno v:
Solar Energy Materials and Solar Cells. 37:395-401
Using the Bridgman method, ingots of CuInSe2 have been grown, which are microcrackfree, void-free and adhesion-free. From these, p-type substrates have been obtained for the fabrication of preliminary CIS/CdS/ZnO and CIS/CdS/CdO photovoltaic cells, w
Publikováno v:
Solar Energy Materials and Solar Cells. 37:389-393
Thin films of p-type CuInSe2 prepared by a one-step electrodeposition method have been studied by constructing CdS/CuInSe2 junctions. After the electrodeposition, the CuInSe2 films were treated either in vacuum or in Ar. Cells of the form CdS (high
Publikováno v:
Journal of Functional Analysis. 119(1):138-170
We study the Banach space isometries of triangular subalgebras of C*-algebras that contain diagonals in the sense of Kumjian. Under a mild technical assumption, we prove that every isometry between two such algebras decomposes as a direct sum of a un
Publikováno v:
Materials Letters. 11:161-163
Thin films of MgO with a thickness of 0.1 μm were deposited by reactive rf sputtering on monocrystalline p-type Si substrates as a diffusion barrier for high-Tc superconductor/semiconductor hybrid devices. After a heat treatment at temperatures from
Publikováno v:
Canadian Journal of Physics. 69:192-194
Thin films of MgO were deposited on p-type monocrystalline Si substrates as buffer layers for high-Tc superconductor/Si hybrid devices. After heat treatment at temperatures in the range from 700 to 1100 °C, the MgO films were removed and Ag/p-Si Sch
Publikováno v:
10th International Conference on Vacuum Microelectronics.