Zobrazeno 1 - 10
of 58
pro vyhledávání: '"C.W. Seabury"'
Autor:
C.L. Lin, Jerry M. Woodall, R.C. Gee, C.W. Seabury, John A. Higgins, P.J. Kirchner, C.W. FarIey, B.T. McDermott
Publikováno v:
51st Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24e3389400be3455a7bcc085d8f5c045
https://doi.org/10.1109/drc.1993.1009594
https://doi.org/10.1109/drc.1993.1009594
Autor:
D.L. Spears, D.Z. Tsang, K.D. Pedrotti, D.E. Mull, C.W. Seabury, Christine A. Wang, Robert J. Bailey, Joseph P. Donnelly, J.D. Woodhouse, H.V. Roussell
Publikováno v:
Proceedings of LEOS'94.
Summary form only given. Modules which implement high-density parallel free-space board-to-board optical interconnections have been constructed with linear arrays of components. These free-space optical interconnections provide the capability for den
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c34d5653dc3e0e5493975998565f319
https://doi.org/10.1109/leos.1994.586970
https://doi.org/10.1109/leos.1994.586970
Publikováno v:
1997 IEEE MTT-S International Microwave Symposium Digest.
We have used thin film ZnO bulk mode resonators on an acoustically reflecting solid glass substrate to produce a variety of filters in the 1-3 GHz frequency bands. Power handling is large (>2W). Overall filter dimensions are very small (/spl sim/1 mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c9612c73b12681d4c9479eae23c75a6
https://doi.org/10.1109/mwsym.1997.604551
https://doi.org/10.1109/mwsym.1997.604551
Publikováno v:
1995 IEEE Ultrasonics Symposium. Proceedings. An International Symposium.
We have used pulsed laser deposition and a dry release process to produce freestanding zinc oxide films for bulk mode microwave acoustic resonators. Laser assisted deposition is used to produce ZnO films with very low (slightly tensile) stress at tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aaca1cf0b546b632c2363d9bad7a277
https://doi.org/10.1109/ultsym.1995.495712
https://doi.org/10.1109/ultsym.1995.495712
Publikováno v:
1995 53rd Annual Device Research Conference Digest.
Heterojunction bipolar transistors (HBTs) need heavily doped p-type regions. However, at high concentrations (>10/sup 19/ cm/sup -3/), most p-type dopants diffuse into other regions of the device, ruining performance and preventing stable, reliable o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc2d90633719e93c7860fca958d60c0
https://doi.org/10.1109/drc.1995.496284
https://doi.org/10.1109/drc.1995.496284
Autor:
G.P. Vella-Coleiro, S.J. Kim, C.M.L. Yee, Jichai Jeong, C.W. Seabury, J. Eng, Y.K. Jhee, D. Deblis, P.S. Davisson, R.B. Bylsma
Publikováno v:
IEEE Photonics Technology Letters. 3:164-166
Operation of an optoelectronic integrated circuit which includes two p-i-n photodetectors, preamplifiers, a 2*2 crosspoint switch, and output buffers has been demonstrated. These circuits are fabricated in semi-insulating InP:Fe substrates by vapor-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91e5487008251bcdc09e126bd6f80560
https://doi.org/10.1109/68.76877
https://doi.org/10.1109/68.76877
Publikováno v:
LEOS 1993 Summer Topical Meeting Digest on Optical Microwave Interactions/Visible Semiconductor Lasers/Impact of Fiber Nonlinearities on Lightwave Systems/Hybrid Optoelectronic Integration and Packagi.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::396f1d7544334e9b235b45b761b9b192
https://doi.org/10.1109/leosst.1993.696865
https://doi.org/10.1109/leosst.1993.696865
Autor:
B.T. McDermott, C.W. Seabury, R.C. Gee, Jerry M. Woodall, C.W. Farley, John A. Higgins, C.L. Lin, P.J. Kirchner
Publikováno v:
IEEE Transactions on Electron Devices. 40:2123-2124
Summary form only given. The authors have measured the gain of InGaAs HBTs (heterojunction bipolar transistors) as a function of base doping, with Zn and Be, using MOCVD (metal-organic chemical vapor deposition), and with C, using gas source MBE (mol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de1dd78b0511c7fbe7b3c59c7ad88c9c
https://doi.org/10.1109/16.239800
https://doi.org/10.1109/16.239800
Publikováno v:
Solid State Communications. 37:383-389
We have used angle-resolved photoemission with synchrotron radiation to study effects of coverage on CO chemisorption on Ir(111). Polarization dependence of the CO peaks at normal emission has been measured for the ( 3 × 3 ) R30° LEED structure (θ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca6bf4862ced134d932977a78f13996e
https://doi.org/10.1016/0038-1098(81)91211-4
https://doi.org/10.1016/0038-1098(81)91211-4
Autor:
R. J. Purtell, W. M. Kang, C. H. Li, C.W. Seabury, K. Jacobi, R. P. Merrill, Thor Rhodin, S. Y. Tong
Publikováno v:
Physical Review Letters. 47:931-934
The azimuthal variations in the photoemission cross section for the $1e$ molecular orbital of N${\mathrm{H}}_{3}$ adsorbed on Ni(111) are used to identify the angular orientation of the adsorbed molecules. From comparison of experiment and theory, it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221b7f26c04f35408533f0e046a497b7
https://doi.org/10.1103/physrevlett.47.931
https://doi.org/10.1103/physrevlett.47.931