Zobrazeno 1 - 10
of 173
pro vyhledávání: '"C.W. Pitt"'
Publikováno v:
Materials Science and Engineering: B. 105:230-235
We have exploited the interaction between erbium ions and silicon nanoclusters to probe the photoresponse of erbium-doped silicon nanocrystals in the spectral region around 1.5 μm. We have produced an MOS device in which the oxide layer has been imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1369aa898525cdd461fa925c72d16aa8
https://doi.org/10.1016/j.mseb.2003.08.051
https://doi.org/10.1016/j.mseb.2003.08.051
Publikováno v:
Journal of Physics: Condensed Matter. 15:S2843-S2850
We report the results of a study into the influence of implanted impurities on luminescence in the region of the well-known D1 luminescence band that is associated with dislocations in silicon. A photoluminescence band at around 0.78 eV, which is som
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640970a19ec2e02ac53ec0d333578a05
https://doi.org/10.1088/0953-8984/15/39/009
https://doi.org/10.1088/0953-8984/15/39/009
Autor:
C.W. Pitt, D.E. Hole, Nikhil Sharma, C.E. Chryssou, Anthony J. Kenyon, Colin J. Humphreys, Tsutomu Shimizu-Iwayama
Publikováno v:
Materials Science and Engineering: B. 81:19-22
We report recent results showing broad-band excitation of erbium ions implanted into thin films of silica containing silicon nanocrystals. Evidence for the existence of nanocrystals is presented in the form of HR-TEM images of crystalline regions of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d7893cf8322549dad0b8e38c4336b91
https://doi.org/10.1016/s0921-5107(00)00677-2
https://doi.org/10.1016/s0921-5107(00)00677-2
Publikováno v:
Journal of Lightwave Technology. 19:345-349
Small-signal amplification in short, Yb/sup 3+/-sensitized, Er/sup 3+/-doped alumina (Al/sub 2/O/sub 3/) channel optical waveguides with high Er/sup 3+/ concentrations is analyzed. Taking into account uniform up conversion, excited state absorption (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c873ecbc14a7bc241cf96c6c1f0ebc01
https://doi.org/10.1109/50.918886
https://doi.org/10.1109/50.918886
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 6:114-121
Er/sup 3+/-doped tellurite and Er/sup 3+/-doped alumina optical waveguide amplifiers are analyzed both as single amplifiers and as elements of 16-channel wavelength-division multiplexing (WDM) systems; their performances are compared with that from E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cecba965f7f540cc2009b9fda681da7f
https://doi.org/10.1109/2944.826879
https://doi.org/10.1109/2944.826879
Publikováno v:
Fiber and Integrated Optics. 18:167-178
Er3+-doped Al2O3 optical waveguides are analyzed both as single amplifiers and as elements of a 16-channel wavelength division multiplexing transmission system; their performance is compared with that from Er3+-doped SiO2 optical waveguide amplifiers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b88eb8a9fd0ceff9fb55b0c167b7d80
https://doi.org/10.1080/014680399244668
https://doi.org/10.1080/014680399244668
Publikováno v:
IEE Proceedings - Optoelectronics. 145:325-330
Successful incorporation both erbium and ytterbium in alumina by ion implantation is reported. Some evidence for indirect pumping of erbium through the transfer of energy from ytterbium has been observed. Both plasma-enhanced CVD deposited alumina th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0009d40c72cbd22f46ba6957e729fdd6
https://doi.org/10.1049/ip-opt:19982477
https://doi.org/10.1049/ip-opt:19982477
Publikováno v:
Scopus-Elsevier
We present a model for the luminescence spectrum of silicon nanoclusters. We propose that the major contribution to luminescence is from radiative recombination of confined excitons (quantum confinement). Utilizing the effective mass approximation we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3db9d3fa83104493f01eb5bf6c2c799
https://doi.org/10.1063/1.366608
https://doi.org/10.1063/1.366608
Autor:
C.W. Pitt, C.E. Chryssou
Publikováno v:
IEEE Journal of Quantum Electronics. 34:282-285
We report the first deposition of Er/sup 3+/-doped aluminum oxide thin-film optical waveguides by plasma-enhanced chemical vapor deposition (PECVD). The aluminum and erbium precursors used for the deposition of the thin films were trimethyl-aluminum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bba3d79cdb75cd263cc883697e6a4f15
https://doi.org/10.1109/3.658711
https://doi.org/10.1109/3.658711
Autor:
C.W. Pitt, C.E. Chryssou
Publikováno v:
Applied Physics A: Materials Science & Processing. 65:469-475
O3 thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor. The thin films were deposited on both Si and quartz silica (SiO2) substrates. Deposition rates were typically 60 A min-1 keepi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f982ba50cea6d8f74a27557a101d0c38
https://doi.org/10.1007/s003390050611
https://doi.org/10.1007/s003390050611