Zobrazeno 1 - 10
of 34
pro vyhledávání: '"C.W. Koburger"'
Publikováno v:
IEEE Transactions on Electron Devices. 37:1253-1287
Structures containing deep-trenched storage capacitors and shallow-trench isolation were examined in patterns suitable for future generation dynamic RAMs (DRAMs). These same effects were also examined in similar structures which included only the sha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1def759da1f57bae8208b61ec1cc71b
https://doi.org/10.1109/16.108186
https://doi.org/10.1109/16.108186
Autor:
W.G. Schwittek, J.K. DeBrosse, R. Schulz, Yuan Taur, M.L. Kerbaugh, C.W. Koburger, M. Jost, B. Davarik, Toshiharu Furukawa, J.L. Mauer, James D. Warnock
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A novel planarization technique for variable size and pattern factors is presented. It is demonstrated that by the combination of reactive ion etching (RIE) and chemical mechanical polish (CMP), the process window is improved to the extent that the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f40a755c69ee30a1217d28e1ebf056
https://doi.org/10.1109/iedm.1989.74228
https://doi.org/10.1109/iedm.1989.74228
Publikováno v:
Journal of The Electrochemical Society. 129:1330-1335
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b82f99e042ef3697126b1e74a085b59b
https://doi.org/10.1149/1.2124130
https://doi.org/10.1149/1.2124130
Publikováno v:
Acta Metallurgica. 26:81-91
High-cycle fatigue tests were performed on aligned CoTaC (Co, 10Cr, 10Ni-15TaC) at room temperature. In addition, tests were performed on related alloys in order to determine the effect of various metallurgical variables on fatigue life: non-alignmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc907fcbc8f919fcda93baa168026fbc
https://doi.org/10.1016/0001-6160(78)90203-1
https://doi.org/10.1016/0001-6160(78)90203-1
Publikováno v:
IEEE Transactions on Electron Devices. 27:1417-1424
A potentially severe limit on density, performance, and wirability of polysilicon-gate technologies for VLSI applications, is the high resistivity of polycrystalline silicon. Composite structures of highly conductive molybdenum or tungsten disilicide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d486aa4e9c10daeffac2fe8e49e27063
https://doi.org/10.1109/t-ed.1980.20050
https://doi.org/10.1109/t-ed.1980.20050
Publikováno v:
Journal of The Electrochemical Society. 129:1307-1312
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::666f824217ba195cbf40eead8deb2b26
https://doi.org/10.1149/1.2124123
https://doi.org/10.1149/1.2124123
Publikováno v:
IEEE Journal of Solid-State Circuits. 15:482-489
A potentially severe limit on density, performance, and virability of polysilicon-gate technologies for VLSI applications, is the high resistivity of polycrystalline silicon. Composite structures of highly conductive molybdenum or tungsten disilicide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1156659a8c7bb9809031ab0a2a10f424
https://doi.org/10.1109/jssc.1980.1051426
https://doi.org/10.1109/jssc.1980.1051426
Publikováno v:
IEEE Electron Device Letters. 5:166-168
Polycides, composite wiring/electrode films formed by depositing a refractory metal silicide such as WSi 2 , MoSi 2 , or TaSi 2 atop a polysilicon film [1]-[4], are finding their way into IC technologies as low-resistivity electrodes/interconnects. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aecb86555f5f09cb0cf567d2a60a6d27
https://doi.org/10.1109/edl.1984.25871
https://doi.org/10.1109/edl.1984.25871
Stress-controlled fatigue experiments have been performed on two directionally solidified fibrous eutectic composites: Co, 10Cr, 10Ni-TaC and Ni, 10Cr, 5Al-TaC at 825°C in vacuum. Fatigue lives were significantly shortened by decreasing test frequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8118caade859edd2b45848153e4e8995
https://doi.org/10.1016/b978-1-4832-8412-5.50199-5
https://doi.org/10.1016/b978-1-4832-8412-5.50199-5
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