Zobrazeno 1 - 10
of 24
pro vyhledávání: '"C.W. Fredriksz"'
Publikováno v:
Thin Solid Films. 233:153-157
We have investigated the optical properties of several Si 1− x Ge x alloys and short-period Si n Ge m superlattices (SLs) grown by molecular beam epitaxy on crystalline Si(001) substrates. The behaviour of the alloy overlayers closely resembles tha
Autor:
L.J. van IJzendoorn, Dirk J. Gravesteijn, C.W. Fredriksz, D.E.W. Vandenhoudt, C. W. T. Bulle‐Lieuwma, G. F. A. van de Walle, C. van Opdorp
Publikováno v:
Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 64(1-4), 120-124. Elsevier
Antimony 5-doping layers in Si have been prepared using molecular beam epitaxy. First of all, a crystalline buffer layer was deposited at 700°C, followed by Sb deposition from a Knudsen cell. After cooling down to room temperature, amorphous Si was
Publikováno v:
Journal of Crystal Growth. 111:916-919
Electrical properties have been examined for single Si/Si 1- x Ge x p-channel modulation-doped heterostructures grown by MBE. Heterostructures with the doped layer on top have a higher hole mobility than structures with the doped layer on the substra
Autor:
Dirk J. Gravesteijn, G. F. A. van de Walle, A.A. van Gorkum, R.A. van den Heuvel, C.W. Fredriksz
Publikováno v:
Thin Solid Films. 184:207-219
Silicon molecular beam epitaxy (MBE) has been shown to be a promising technology for ultralow temperature epitaxy. Its capability to deposit strained Si-Ge layers and superlattices has received much attention. In this paper, the design, performance t
Autor:
Dirk J. Gravesteijn, C.W. Fredriksz, J.M.L. van Rooij-Mulder, G. F. A. van de Walle, R.A. van de Heuvel, A.A. van Gorkum, Jan W. Slotboom, Armand Pruijmboom, G. Streutker
Publikováno v:
IEEE Electron Device Letters. 12:357-359
High-quality SiGe heterojunction bipolar transistors (HBTs) have been fabricated using material grown by molecular beam epitaxy (MBE). The height of parasitic barriers in the conduction band varied over the wafer, and the influence of these barriers
Autor:
A.A. van Gorkum, Dirk J. Gravesteijn, T. Mishima, C.W. Fredriksz, R.A. van den Heuvel, G. F. A. van de Walle
Publikováno v:
Applied Physics Letters. 57:2567-2569
Electrical properties have been examined for single Si/Si0.8Ge0.2 p‐type modulation‐doped heterostructures which have been grown by molecular beam epitaxy. It is shown that the two‐dimensional hole gas in a normal modulation‐doped heterostruc
Publikováno v:
Journal of Applied Physics, 72(9), 4047-4062. American Institute of Physics
Antimony δ-doping layers were made by deposition of Sb on monocrystalline Si, followed by the deposition of amorphous Si and a final solid-phase-epitaxy treatment at 620 °C. After post-annealing at temperatures between 625 and 725 °C, Sb precipita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18ea77ae38d85df02c9659dc3b9c1a25
https://research.tue.nl/nl/publications/1326822d-aa65-4e0f-b548-25d8798139be
https://research.tue.nl/nl/publications/1326822d-aa65-4e0f-b548-25d8798139be
Autor:
R.A. van den Heuvel, Dirk J. Gravesteijn, A.A. van Gorkum, C.W. Fredriksz, T. Mishima, G. F. A. van de Walle
Publikováno v:
Extended Abstracts of the 1990 International Conference on Solid State Devices and Materials.
Analysis of the carrier-induced FM response of DFB lasers: theoretical and experimental case studies
Publikováno v:
IEEE Journal of Quantum Electronics. 25:2239-2254
A comprehensive analysis of the carrier-induced FM response of DFB lasers is given. Experimentally it is found that the FM response can sometimes vary strongly from chip to chip. In a number of cases anomalies either as a function of frequency or as
Publikováno v:
MRS Proceedings. 160
The luminescence of short period Si/Ge superlattices was systematically studied as a function of composition, strain and superlattice period. With Rutherford backscattering spectrometry the composition was determined, while X-ray diffraction was used