Výsledky vyhledávání

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Analysis of STI-induced mechanical stress-related Kink effect of 40nm PD SOI NMOS devices biased in saturation region

Autor: M. Ma, V.C. Su, I.S. Lin, James B. Kuo, D. Chen, Chia Ti Tsai, C.S. Yeh

Publikováno v: Solid-State Electronics. 52:1884-1888

This paper reports the shallow trench isolation (STI)-induced mechanical stress-related Kink effect behaviour of the 40 nm PD SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, the Kink effect behaviour in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f1b3c951ff769fc0afb2a3669a51556b
https://doi.org/10.1016/j.sse.2008.06.052

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

A mixture model for magneto-rheological materials

Autor: C.S. Yeh, K.C. Chen

Publikováno v: Continuum Mechanics and Thermodynamics. 14:495-510

To model the response of magnetorheological (MR) materials, a continuum theory for a mixture consisting of a fluid continuum and a solid one is developed. In this mixture theory, the structure composed of the magnetizable particles in MR fluids is tr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bae62cafa8deced7c4a7ab593819e0e1
https://doi.org/10.1007/s001610200085

Zobrazit plný text záznamu

Description of magnetorheological behavior with internal variables

Autor: C.S. Yeh, K.C. Chen

Publikováno v: International Journal of Engineering Science. 40:461-482

The macroscopic theory of magnetorheological (MR) fluids is investigated by the use of the tensorial and vectorial internal variables. After both variables are defined, the balance equations, entropy inequality and evolution equations can be obtained

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::45ad7a705fb1d4b36f81e578c01e8dc9
https://doi.org/10.1016/s0020-7225(01)00074-x

Zobrazit plný text záznamu

Shallow trench isolation-related narrow channel effect on the kink behaviour of 40nm PD SOI NMOS device

Autor: Chia Ti Tsai, D. Chen, James B. Kuo, H. J. Hung, C.S. Yeh

Publikováno v: Solid-State Electronics. 54:609-611

This paper reports the shallow trench isolation (STI)-related narrow channel effect (NCE) on the kink behaviour of the 40 nm PD SOI NMOS device. As verified by the experimentally measured data, with a smaller channel width, the onset of the kink effe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a05d1ef9f16a4c714d2b9e00c149065
https://doi.org/10.1016/j.sse.2009.11.001

Zobrazit plný text záznamu

Analysis of eddy currents in a bar containing an embedded defect

Autor: Jiunn-Woei Liaw, C.S. Yeh, Mao-Kuen Kuo, S.L. Chu

Publikováno v: NDT & E International. 32:293-303

The eddy current distribution is studied in a metal bar containing an embedded defect inserted within an encircling coil. Furthermore, the impedance change of the coil regarding the characteristics of the defect is determined. The defects investigate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::83d38cf2f0f71d0a66363d88d74c6401
https://doi.org/10.1016/s0963-8695(98)00051-6

Zobrazit plný text záznamu

Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect

Autor: I.S. Lin, D. Chen, C.T. Tsai, G.S. Lin, M. Ma, V.C. Su, C.S. Yeh, James B. Kuo

Publikováno v: IEEE Electron Device Letters. 29:612-614

This letter reports the shallow-trench-isolation (STI)-induced mechanical-stress-related breakdown behavior of the 40-nm PD-SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, breakdown occurs at a higher d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::54a7600ee8f0295005cd4ecc86ee1bcf
https://doi.org/10.1109/led.2008.922971

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání