Zobrazeno 1 - 10
of 429
pro vyhledávání: '"C.R. Wronski"'
Autor:
Weizhi Han, Deren Yang, Lu Wei, Zheng Jiayi, Quan Weijuan, Liu Shiyong, Xinwei Niu, Shan Wei, Haibin Duan, C.R. Wronski, Li Yunfeng
Publikováno v:
Solar Energy Materials and Solar Cells. 127:21-26
The reactive ion etching in combination with acidic etching (acidic+RIE) is applied to form the front surface texturing of 156×156 mm2 multicrystalline silicon (mc-Si) wafers in order to improve the cell efficiency. The scanning electron microscope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4edaf20659384032d5dd31351f3263b7
https://doi.org/10.1016/j.solmat.2014.04.001
https://doi.org/10.1016/j.solmat.2014.04.001
Autor:
Miro Zeman, B. Vet, R.A.C.M.M. van Swaaij, Arno H. M. Smets, Marinus Fischer, David C. Bobela, MA Wank, R. M. C. M. van de Sanden, C.R. Wronski
Publikováno v:
IEEE Journal of Photovoltaics, 2(2), 94-98. IEEE Electron Devices Society
The bandgap of hydrogenated amorphous silicon (a-Si:H) is studied using a unique set of a-Si:H films deposited by means of three different processing techniques. Using this large collection of a-Si:H films with a wide variety of nanostructures, it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb6cbaad90af00979ef660e6724c9a58
https://doi.org/10.1109/jphotov.2011.2180701
https://doi.org/10.1109/jphotov.2011.2180701
Publikováno v:
Vacuum. 82:1137-1140
Phase diagrams have been studied to describe the RF PECVD process for intrinsic-hydrogenated silicon Si:H and silicon–low germanium alloy a-Si 1− x Ge x :H thin films using textured Al substrates that have been overdeposited with n-type amorphous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e82f53627753d31c9c8d516a38d5a3d
https://doi.org/10.1016/j.vacuum.2008.01.031
https://doi.org/10.1016/j.vacuum.2008.01.031
Publikováno v:
Vacuum. 82:1145-1150
Recent developments in the photovoltaic (PV) industry, driven by a shortage of solar grade Si feedstock to grow Si wafers or ribbons, have stimulated a strong renewed interest in thin-film technologies and in particular in solar cells based on protoc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::826fc70cea9641bd3d4cdc78b782a2f9
https://doi.org/10.1016/j.vacuum.2008.01.043
https://doi.org/10.1016/j.vacuum.2008.01.043
Publikováno v:
Journal of Non-Crystalline Solids. 352:1263-1267
Phase diagrams have been developed to describe rf plasma-enhanced chemical vapor deposition (PECVD) of hydrogenated silicon-germanium alloys (Si 1-x Ge x :H) on crystalline Si substrates held at 200 °C. For a series of three such overlapping diagram
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2ca9b2cce295624e0698878e9b792d8
https://doi.org/10.1016/j.jnoncrysol.2005.09.037
https://doi.org/10.1016/j.jnoncrysol.2005.09.037
Publikováno v:
Journal of Non-Crystalline Solids. 352:950-954
The evolution of surface roughness on hydrogenated amorphous silicon (a-Si:H) films prepared by plasma-enhanced chemical vapor deposition exhibits initial smoothening due to nuclei coalescence, a region of surface stability, and finally a prominent r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::719fd0bd4ff0e04b3c11881d4e1c5186
https://doi.org/10.1016/j.jnoncrysol.2005.12.013
https://doi.org/10.1016/j.jnoncrysol.2005.12.013
Autor:
Robert W. Collins, C.R. Wronski
Publikováno v:
Solar Energy. 77:877-885
Until recently, the advances in hydrogenated amorphous silicon (a-Si:H) solar cell performance and stability have been achieved materials prepared with hydrogen dilution following primarily empirical approaches. This paper discusses the recently obta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78021bc7aea905a9dd0d8538b3088e08
https://doi.org/10.1016/j.solener.2004.03.008
https://doi.org/10.1016/j.solener.2004.03.008
Publikováno v:
Electrical and Computer Engineering Publications
Real time spectroscopic ellipsometry has been applied to develop deposition phase diagrams for p-type hydrogenated silicon (Si:H) films prepared at low temperature (200 °C) by rf plasma-enhanced chemical vapor deposition using gas mixtures of SiH4,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ad8e053de2c0c9c31529c63c59826b5
https://doi.org/10.1016/j.jnoncrysol.2004.03.062
https://doi.org/10.1016/j.jnoncrysol.2004.03.062
Autor:
Joohyun Koh, Chi Chen, Andre S. Ferlauto, G.M. Ferreira, Yeeheng Lee, R.J. Koval, C.R. Wronski, Joshua M. Pearce, Robert W. Collins
Publikováno v:
Electrical and Computer Engineering Publications
Real time spectroscopic ellipsometry has been applied to develop deposition phase diagrams that can guide the fabrication of hydrogenated silicon (Si:H) thin films at low temperatures (< 300°C) for highest performance electronic devices such as sola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93d1870be634ccd72c8564cf1ac37961
https://doi.org/10.1016/s0927-0248(02)00436-1
https://doi.org/10.1016/s0927-0248(02)00436-1