Zobrazeno 1 - 10
of 24
pro vyhledávání: '"C.R. Manoj"'
Publikováno v:
Ain Shams Engineering Journal, Vol 15, Iss 9, Pp 102887- (2024)
Lane detection is a fundamental component of advanced driver assistance systems, facilitating critical functionalities like Lane Keep/Change Assistance, Lane Departure Warning, Adaptive Cruise Control, and Vehicle Localization. Despite significant ad
Externí odkaz:
https://doaj.org/article/883c51f1293d4c34a0f36343ac0575bd
Akademický článek
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Akademický článek
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Publikováno v:
IEEE Electron Device Letters. 31:83-85
In this letter, we report the enhanced fringe capacitance in FinFETs when compared to the equivalent planar MOSFETs at the 22-nm node. We show that this increase is due to the 3-D nature of the device and also due to the close proximity of the source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8194dc8a4667cd7f620c614fe1173f6
https://doi.org/10.1109/led.2009.2035934
https://doi.org/10.1109/led.2009.2035934
Publikováno v:
IEEE Electron Device Letters. 29:128-130
The difficulty to fabricate and control precisely defined doping profiles in the source/drain underlap regions of FinFETs necessitates the use of undoped gate underlap regions as the technology scales down. We present a phenomenon called the gate fri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e53e3674d60715384eb3e91e7e494af
https://doi.org/10.1109/led.2007.911974
https://doi.org/10.1109/led.2007.911974
Autor:
C.R. Manoj, K. G. Anil, V. Ramgopal Rao, Felice Crupi, Paolo Magnone, D. Maji, Gino Giusi, S. Chabukswar, Calogero Pace, Nadine Collaert
Publikováno v:
IndraStra Global.
In this paper, we report a study to understand the fin width dependence on performance, variability and reliability of n-type and p-type triple-gate fin field effect transistors (FinFETs) with high-k dielectric and metal gate. Our results indicate th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7aa7b2d1bb8da47830305b84f203bc24
Autor:
B. De Jaeger, Valipe Ramgopal Rao, Paolo Magnone, Rosana Rodriguez, Eddy Simoen, David P. Brunco, C.R. Manoj, Luigi Pantisano, Gino Giusi, Felice Crupi, Calogero Pace, Jerome Mitard, Montserrat Nafria, Esteve Amat, D. Maji
In this paper, a comprehensive study of hot- carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature insta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a2a3fb5ef59d99dd021fe08087fa87e
http://hdl.handle.net/11570/2749600
http://hdl.handle.net/11570/2749600
Publikováno v:
2007 International Workshop on Physics of Semiconductor Devices.
FinFETs are the leading candidates for sub 32nm technology node owing to their increased immunity to short channel effects and better scalability. Most of the fabricated FinFETs are on SOI substrates. But fabrication of FinFETs using the bulk CMOS su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10e3847a44ee499a448abaedf1f67366
https://doi.org/10.1109/iwpsd.2007.4472472
https://doi.org/10.1109/iwpsd.2007.4472472
Publikováno v:
2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits.
It is shown that body doping can be used to match the Bulk FinFETs' DC performance with that of SOI FinFETs, even down to 22 nm technology node, by using calibrated full 3D device simulations. However higher body doping does not necessarily mean bett
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c96437edfee9c3b54322efcfcf3bb3ef
https://doi.org/10.1109/ipfa.2007.4378080
https://doi.org/10.1109/ipfa.2007.4378080
Autor:
Valipe Ramgopal Rao, C.R. Manoj
Publikováno v:
IndraStra Global.
The impact of high-k gate dielectrics on device short-channel and circuit performance of fin field-effect transistors is studied over a wide range of dielectric permittivities k. It is observed that there is a decrease in the parasitic outer fringe c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4f6149d6ce1315dd6baa526f9ea36d5
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8348
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8348