Zobrazeno 1 - 10
of 20
pro vyhledávání: '"C.N. Rheinfelder"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 46:709-712
This paper provides both modeling and design information on coplanar passive elements on a silicon substrate. The influence of substrate resistivity on coplanar waveguide (CPW) loss is discussed, and elements of a cell library for coplanar monolithic
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 45:2503-2508
A new large-signal model for SiGe heterostructure bipolar transistors (HBTs) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from S-parameter measurements using a special procedure
Autor:
J.-F. Luy, T. Hess, Wolfgang Menzel, M. Nadarassin, C. Warns, C.N. Rheinfelder, Wolfgang Heinrich, Karl Strohm, H. Kuhnert, P. Nuechter
Oscillators in SiGe SIMMWIC HBT technology have been realized in coplanar and a newly developed microstrip environment. Coplanar 24 GHz LC oscillators show 8.7 dBm output power and a phase noise of -99 dBc/Hz @ 100 kHz offset. Coplanar 27 GHz VCO's y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e855fa1844069c71115af8fade142dbe
Autor:
J. Gerdes, K.M. Strohm, C.N. Rheinfelder, J.F. Luy, F. Beisswanger, W. Heinrich, F.J. Schmuckle
Publikováno v:
IEEE Microwave and Guided Wave Letters. 6:398-400
Design, technology, and first results of a coplanar Si-SiGe HBT oscillator monolithically integrated on high-resistivity silicon are reported. At 38 GHz, an oscillator output power of 2 dBm with a conversion (dc to rf) efficiency of 6% is measured.
Publikováno v:
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
A 47 GHz MMIC SiGe-HBT oscillator on high-resistivity silicon is presented. An output power of 13.1 dBm and an efficiency of 13.6% is measured. The oscillator exhibits a phase-noise of -99.31 dBc/Hz at 100 kHz off-carrier. These results represent a n
Publikováno v:
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
A process is described for the realization of via holes for microstrip transmission lines and passive elements on high resistivity silicon (/spl rho/>4000 /spl Omega/cm, 100 mm diameter, 100 /spl mu/m thickness). Via hole etching with vertical sidewa
Autor:
W. Heinrich, F. Beisswanger, C.N. Rheinfelder, J. Gerdes, F.J. Schmuckle, J.-F. Luy, Karl Strohm
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
First results on coplanar MMICs with SiGe HBTs are presented. The circuits are fabricated on high-resistivity Si substrates using a double-mesa HBT process. In the Ka-band, an oscillator output power of 1 dBm and 4.4 dB gain for a one-stage amplifier
Autor:
J.-F. Luy, W. Heinrich, F.J. Schmuckle, F. Schaffler, J. Gerdes, Ralf Doerner, C.N. Rheinfelder, Karl Strohm
Publikováno v:
Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
As the first step in the development of coplanar SiGe MMIC's, modelling and experimental results on passive components are presented. The investigations demonstrate that parasitic effects induced by passivation of high-resistivity silicon substrates
Publikováno v:
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).
A near-range sensor for an electronic automotive cocoon from concept to realization is presented. Based on the commercial TEMIC SiGe technology on high and low resistivity Si substrate the DSSS- (direct sequence spread spectrum) concept allows a simp
Publikováno v:
2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).
A comparison of 22 and 25 GHz MMIC SiGe-HBT oscillators on high- and low-resistivity silicon employing the commercial TEMIC process is presented. An output power of 11 dBm at 22 GHz, an efficiency of 24%, and, at 25 GHz, a phase-noise of -93 dBc/Hz a