Zobrazeno 1 - 10
of 54
pro vyhledávání: '"C.M. Pettit"'
Publikováno v:
Journal of The Electrochemical Society. 161:H583-H592
Publikováno v:
Thin Solid Films. 520:2892-2900
Chemical mechanical planarization (CMP) of tantalum nitride is an essential step of material processing in the fabrication of integrated circuits. This CMP step often involves the chemical formation of a structurally weak oxide-complex film on the wa
Publikováno v:
Surface and Interface Analysis. 44:801-810
Surface plasmon resonance (SPR) and electrochemical measurements are combined in this work to study the interactions of a gold film electrode with aqueous electrolytes of an ionic liquid (IL), 1-ethyl-3-methyl-imidazolium ethyl sulfate. The optical r
Publikováno v:
Materials Chemistry and Physics. 129:1159-1170
The fabrication of interconnect structures for semiconductor devices requires low down-pressure chemical mechanical planarization (CMP) of Ta barrier layers. Guanidine carbonate (GC) serves as an effective surface-complexing agent for such CMP applic
Publikováno v:
Journal of Applied Electrochemistry. 41:561-576
Nitrate, sulfate, and phosphate oxyanions are shown to serve as effective surface-modifying agents for low-pressure chemical–mechanical planarization (CMP) of Ta and TaN barrier layers of interconnect structures. The surface reactions that form the
Publikováno v:
Talanta. 78:1056-1062
Carbon nanotube (CNT) electrodes in combination with ionic liquid (IL) electrolytes are potentially important for energy storage systems. We report electrochemical investigation of such a system involving a paper-electrode of multi-wall CNT (MWCNT) i
Publikováno v:
Journal of Applied Electrochemistry. 38:1347-1356
Dissolution inhibition capabilities of benzotriazole (BTAH) and ammonium dodecyl sulfate (ADS) are investigated, in combination with β-alanine, as a complexing agent for applications in electrochemical mechanical planarization (ECMP) of copper. Cu e
Publikováno v:
Journal of Electroanalytical Chemistry. 589:219-231
The differential capacitance (Cdiff) technique is widely employed in studies of metal–liquid interfaces, and is particularly useful for probing electrochemical effects of surface charge variations under voltage control. For such applications, howev
Autor:
Dipankar Roy, C.M. Pettit
Publikováno v:
Materials Letters. 59:3885-3889
Chemical mechanical planarization (CMP) is currently used in the processing of Cu/Ta interconnect structures. Electrochemical mechanical planarization (ECMP) is an emerging extension of CMP that can potentially allow low down-pressure planarization o
Publikováno v:
Materials Chemistry and Physics. 86:347-357
This work presents an electrochemical investigation of chemical reactions kinetics in chemical–mechanical polishing of Ta in a peroxide-based alkaline medium. Time resolved Fourier transform electrochemical impedance spectroscopy is combined with c