Zobrazeno 1 - 10
of 107
pro vyhledávání: '"C.M. Maziar"'
Autor:
Haihong Wang, Wei-Kai Shih, G. Chindalore, S. Mudanai, Sanjay K. Banerjee, A.F. Tasch, Q. Ouyang, C.M. Maziar
Publikováno v:
IEEE Transactions on Electron Devices. 46:1749-1759
We present new physically based effective mobility models for both electrons and holes in MOS accumulation layers. These models take into account carrier-carrier scattering, in addition to surface roughness scattering, phonon and fixed interface char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c269056e56b8b8ad8f029f3bf880e7f9
https://doi.org/10.1109/16.777166
https://doi.org/10.1109/16.777166
Autor:
C.M. Maziar, S. Jallepalli, K. Hasnat, Al F. Tasch, Shyam Krishnamurthy, Choh-Fei Yeap, S.A. Hareland
Publikováno v:
IEEE Transactions on Electron Devices. 43:90-96
Successful scaling of MOS device feature size requires thinner gate oxides and higher levels of channel doping in order to simultaneously satisfy the need for high drive currents and minimal short-channel effects. However, in deep submicron (/spl les
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de87991b9d6368018300dc61f25f4d87
https://doi.org/10.1109/16.477597
https://doi.org/10.1109/16.477597
Publikováno v:
IEEE Transactions on Electron Devices. 47:643-645
This work presents for the first time experimental results for the extraction of the increase in the effective electrical oxide thickness (/spl Delta/t/sub ox/=t/sub ox,expt/-t/sub ox,physical/) in MOS accumulation layers with heavily doped substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71c46186b8363cb2d135adfa312317ae
https://doi.org/10.1109/16.824741
https://doi.org/10.1109/16.824741
Publikováno v:
Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d89c8007bb17d2ab533b16872df1e22
https://doi.org/10.1109/nupad.1990.748265
https://doi.org/10.1109/nupad.1990.748265
Publikováno v:
51st Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ee6dd57cdde9c73f55dc1dae403c5af
https://doi.org/10.1109/drc.1993.1009615
https://doi.org/10.1109/drc.1993.1009615
Publikováno v:
50th Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cdd11747c9aa0f40bd2cdd8c8acd60c
https://doi.org/10.1109/drc.1992.671855
https://doi.org/10.1109/drc.1992.671855
Autor:
M.R. Shaheed, C.M. Maziar
Publikováno v:
Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting.
Various collector structures were simulated to identify design options which lead to an increase in the breakdown voltage of high speed SiGe-base heterojunction bipolar transistors (HBTs). The authors propose an approach for increasing the breakdown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c56e18a1d442d3494a804d99544bde3b
https://doi.org/10.1109/bipol.1992.274086
https://doi.org/10.1109/bipol.1992.274086
Autor:
A.F. Tasch, C.M. Maziar
Publikováno v:
[1993] Proceedings of the Tenth Biennial University/Government/Industry Microelectronics Symposium.
A highly successful university-government-industry microelectronics partnership is described. It resulted in a successful ion implantation modeling program. This program continues to be very active. It has transferred and continues to transfer consid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::775c40b75c9f2b13516a0a872ac64a15
https://doi.org/10.1109/ugim.1993.297046
https://doi.org/10.1109/ugim.1993.297046
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
A first-principles approach to inversion layer quantization for arbitrarily complex band structures has been developed that has allowed, for the first time, hole quantization and its effects on p-MOSFET device characteristics to be studied. In additi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1887c3bdb391cc9be35bc003e9c1780
https://doi.org/10.1109/vlsit.1996.507824
https://doi.org/10.1109/vlsit.1996.507824
Autor:
A.F. Tasch, S. Jallepalli, Choh-Fei Yeap, V.M. Agostinelli, K. Hasnat, T.J. Bordelon, C.M. Maziar, X.L. Wang
Publikováno v:
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.
Substrate current model based on the post-processing 1-D hydrodynamic model attached to drift-diffusion simulators has proven to be efficient and accurate for predicting substrate current for contemporary submicron MOSFETs. However, as devices shrink
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03193f642240f5e746ce11004c84c4bb
https://doi.org/10.1109/nupad.1994.343501
https://doi.org/10.1109/nupad.1994.343501