Zobrazeno 1 - 10
of 38
pro vyhledávání: '"C.M. Grens"'
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 9:440-448
This paper presents the underlying physics and modeling of aggressively biased cascode SiGe heterojunction bipolar transistor power amplifier (PA) cores under large-signal operating conditions. The damage characteristics observed during RF operation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abcd70845a83d4d2e728a25854250ac1
https://doi.org/10.1109/tdmr.2009.2025151
https://doi.org/10.1109/tdmr.2009.2025151
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 9:431-439
This paper examines the performance and reliability implications associated with aggressively biased cascode SiGe HBT power-amplifier cores under large-signal RF operating conditions. The role of high-power RF stress on device degradation and failure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eecc51241ba08d71c2dd5d3d489eea0
https://doi.org/10.1109/tdmr.2009.2025029
https://doi.org/10.1109/tdmr.2009.2025029
Publikováno v:
IEEE Transactions on Electron Devices. 55:1276-1285
This paper presents a detailed investigation of the key device-level factors that contribute to the bias-dependent features observed in common-base (CB) dc instability characteristics of advanced SiGe HBTs. Parameters that are relevant to CB avalanch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::112b02b156ab44266673994bbbbbcc09
https://doi.org/10.1109/ted.2008.920235
https://doi.org/10.1109/ted.2008.920235
Publikováno v:
IEEE Transactions on Electron Devices. 54:1605-1616
This paper presents a comprehensive picture of operating-voltage constraints in SiGe heterojunction bipolar transistors, addressing breakdown-related issues as they relate to technology generation, bias configuration, and operating-current density. N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e84d225368d73b78716e633ef7b20a
https://doi.org/10.1109/ted.2007.898671
https://doi.org/10.1109/ted.2007.898671
Autor:
Tianbing Chen, Cheryl J. Marshall, Akil K. Sutton, Alvin J. Joseph, C.M. Grens, B.M. Haugerud, Paul W. Marshall, John D. Cressler
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2403-2407
The effect of proton irradiation on operating voltage constraints in SiGe HBTs is investigated for the first time in 120 GHz and 200 GHz SiGe HBTs. A variety of operating bias conditions was examined during irradiation, including terminals grounded,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a100371ad984da264708e212bbfb41c1
https://doi.org/10.1109/tns.2005.860700
https://doi.org/10.1109/tns.2005.860700
Autor:
Sachin Seth, Alan Buchholz, Jeff A. Babcock, Tushar Thrivikraman, Marco Bellini, John D. Cressler, Tianbing Chen, Peng Cheng, C.M. Grens, Jonggook Kim
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
The RF safe-operating-area of a variety of both bulk and thick-film SOI SiGe HBTs SiGe has been investigated using DC and pulsed-mode output characteristics, as well as RF gain and linearity measurements. SOI SiGe HBTs are found to suffer more from s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b12a4841b7f73064a601a13776152cd6
https://doi.org/10.1109/bipol.2009.5314144
https://doi.org/10.1109/bipol.2009.5314144
Autor:
Alan Buchholz, C.M. Grens, Yun Liu, Sachin Seth, Peng Cheng, John D. Cressler, Jonggook Kim, Jeff A. Babcock
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
The RF linearity characteristics of complementary (npn + pnp) SiGe HBTs are investigated with respect to bias and frequency dependence, for the first time. The differences in distortion performance between npn and pnp SiGe HBTs are examined. Overall,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e42c8ed526613214d2e1beb1a5b5a5
https://doi.org/10.1109/bipol.2009.5314146
https://doi.org/10.1109/bipol.2009.5314146
Publikováno v:
IEEE Transactions on Electron Devices.
Most bipolar-transistor compact models incorporate some level of self-heating capability in order to determine the impact of thermal effects on circuit performance. Techniques for predicting mutual-thermal-coupling effects, however, are not readily a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cbcad61ba315ea78d9ec85c7758d0c9
https://doi.org/10.1109/ted.2009.2021365
https://doi.org/10.1109/ted.2009.2021365
Publikováno v:
2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
We present a high-dynamic range (HDR) X-band LNA implemented in silicon-germanium (SiGe) technology tar- geting high-performance radar and wireless communications applications. To our knowledge, this is the first Si-based LNA to achieve over 30 dB ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed41a4b1cd8d475b43f8b4f8e4158c2f
https://doi.org/10.1109/smic.2009.4770539
https://doi.org/10.1109/smic.2009.4770539
Publikováno v:
2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
This paper presents analysis of RF safe-operating- area of aggressively-biased cascode SiGe HBT power amplifier cores under large-signal operating conditions. It is demonstrated that as VC and |ZL| increase, the RF power threshold to cause catastroph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b87caa6cb41dcd9745c21656d3b61d9
https://doi.org/10.1109/smic.2009.4770543
https://doi.org/10.1109/smic.2009.4770543