Zobrazeno 1 - 10
of 191
pro vyhledávání: '"C.M. Fortmann"'
Publikováno v:
Journal of Non-Crystalline Solids. 354:2548-2551
Disorder in hydrogenated amorphous silicon leads to short electronic diffusion lengths and poor electronic lifetimes relative to crystalline silicon. Interestingly this same disorder can lead to longer phonon diffusion lengths and lifetimes. These pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e03fd75b295c1a2ca96f51197b25ff
https://doi.org/10.1016/j.jnoncrysol.2007.10.075
https://doi.org/10.1016/j.jnoncrysol.2007.10.075
Publikováno v:
Thin Solid Films. 501:350-353
Optically smooth hot-wire deposited films were characterized with respect to the photonic application by examination of the slab wave guiding of the room temperature bulk photoluminescence. Films displayed strong photoluminescence as well as strong s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f8dafce1ed54f7442d283bafb03801
https://doi.org/10.1016/j.tsf.2005.07.149
https://doi.org/10.1016/j.tsf.2005.07.149
Publikováno v:
Thin Solid Films. 430:278-282
The prospect of an integrated photonic technology has fueled an effort to understand the optical properties and to gauge the photonic engineering potential of hydrogenated amorphous silicon-based materials. Of particular interest for photonic enginee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df5843d1e502b0db9b29a7f48280771
https://doi.org/10.1016/s0040-6090(03)00134-2
https://doi.org/10.1016/s0040-6090(03)00134-2
Publikováno v:
Journal of Non-Crystalline Solids. :1267-1271
Significant advances have occurred in amorphous silicon-based photonic engineering. Previously we showed that amorphous silicon was an ideal matrix for photonic engineering because of the ease by which the refractive index can be controlled through i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d070f0bb0f9b2e6ecdcbdf5f0a991c91
https://doi.org/10.1016/s0022-3093(01)01148-6
https://doi.org/10.1016/s0022-3093(01)01148-6
Publikováno v:
Thin Solid Films. 395:142-146
A new amorphous silicon application related to the patterning of refractive index for the purpose of defining and integrating photonic-device elements is emerging. Photonic device elements include waveguides, splitters, mirrors, optical memories, etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bdd91a8b80d714c729ae6af102965a8
https://doi.org/10.1016/s0040-6090(01)01239-1
https://doi.org/10.1016/s0040-6090(01)01239-1
Publikováno v:
Solar Energy Materials and Solar Cells. 66:329-335
Improved device structures including transparent conductive oxide (TCO) and p-layers were studied for better photovoltaic performance with narrow bandgap a-Si:H solar cells prepared in p–I–n sequence on TCO-coated glass. The narrow bandgap ( E g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1f2b758439ba9ea39255d0e1509a35f
https://doi.org/10.1016/s0927-0248(00)00191-4
https://doi.org/10.1016/s0927-0248(00)00191-4
Autor:
Takashi Komaru, W. Futako, K. Ohkawa, C.M Fortmann, Isao Shimizu, H. Sato, Satoshi Shimizu, Toshio Kamiya
Publikováno v:
Solar Energy Materials and Solar Cells. 66:297-303
Stability against light soaking was studied for amorphous silicon (a-Si:H) solar cells using three different i-layers; (a) device-quality a-Si:H (standard a-Si:H) with bandgap of 1.75 eV, (b) narrow bandgap (1.55 eV) a-Si:H fabricated by Ar* chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0bfa91b271d89d3db2fe2a69e11582b
https://doi.org/10.1016/s0927-0248(00)00187-2
https://doi.org/10.1016/s0927-0248(00)00187-2
Autor:
Toshio Kamiya, Kojiro Okawa, Takashi Komaru, M Azuma, Isao Shimizu, C.M Fortmann, Satoshi Shimizu
Publikováno v:
Solar Energy Materials and Solar Cells. 66:289-295
Chlorinated intrinsic amorphous silicon films [a-Si:H(Cl)] and solar cell i-layers were fabricated using electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) and SiH 2 Cl 2 source gas. n–i–p solar cells deposited on ZnO–coa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5da440a7578374c6f6a349588eeb163
https://doi.org/10.1016/s0927-0248(00)00186-0
https://doi.org/10.1016/s0927-0248(00)00186-0
Publikováno v:
Solar Energy Materials and Solar Cells. 66:313-320
Polycrystalline silicon (poly-Si) films were deposited on glass by very high-frequency (100 MHz) plasma enhanced chemical vapor deposition from a gaseous mixture of SiF4 and H2 with small amounts of SiH4. (2 2 0) oriented films prepared at small SiF4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4abc5b0be15778401ffe97a1d62cde47
https://doi.org/10.1016/s0927-0248(00)00189-6
https://doi.org/10.1016/s0927-0248(00)00189-6
Publikováno v:
Solar Energy Materials and Solar Cells. 66:321-327
Narrow band gap (∼1.5 eV) hydrogenated amorphous silicon (a-Si:H) were fabricated by a chemical annealing technique using noble gases (Ar, He, Ne). Although hydrogen content in the film was reduced to ∼1 atm% and band gap was decreased to 1.52 eV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee8023ce2fd458e19588cfc2a059b35f
https://doi.org/10.1016/s0927-0248(00)00190-2
https://doi.org/10.1016/s0927-0248(00)00190-2