Zobrazeno 1 - 10
of 79
pro vyhledávání: '"C.L. Littler"'
Autor:
V.C. Lopes, C.L. Littler, A. J. Syllaios, Tallis Y. Chang, B.J. Western, John H. Hong, Michael Harcrow, Sean C. Andrews, Usha Philipose
Publikováno v:
Journal of Non-Crystalline Solids. 564:120845
Temperature dependent conductivity measurements were performed on phosphine doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition over a range of argon dilution and phosphine [PH3] doping. Resistance curve derivative
Publikováno v:
Journal of Non-Crystalline Solids. 459:176-183
We report on electrical noise measurements of p-type a-Si:H thin films prepared by plasma enhanced chemical vapor deposition. Samples were grown at various boron concentrations and hydrogen dilution of the silane precursor. Measurements were made at
Autor:
Ray Gunawidjaja, Michael Harcrow, Zhi-Gang Yu, V.C. Lopes, C.L. Littler, A. J. Syllaios, Brianna Western
Publikováno v:
Image Sensing Technologies: Materials, Devices, Systems, and Applications V.
Electrical conduction in materials used in microbolometer technology, such as vanadium oxide (VOx) and amorphous silicon (a-Si), is via carrier hopping between localized states. The hopping conduction parameters determine the temperature coefficient
Publikováno v:
MRS Proceedings. 1770:25-30
We report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be desc
Publikováno v:
MRS Proceedings. 1536:127-132
In this study, we employed Multiple Internal Reflection Infrared Spectroscopy (MIR-IR) to characterize chemical bonding structures of boron doped hydrogenated amorphous silicon (a-Si:H(B)). This technique has been shown to provide over a hundred fold
Publikováno v:
MRS Proceedings. 1536:181-186
Noise and electrical conductivity measurements were made at temperatures ranging from approximately 270°K to 320°K on devices fabricated on as grown Boron doped p-type a-Si:H films. The room temperature 1/f noise was found to be proportional to the
Publikováno v:
Journal of Electronic Materials. 34:768-772
Transmission spectra of liquid-phase epitaxy (LPE) Hg1-xCdxTe with Cd mole fractions in the range of 0.23
Autor:
P Liao, R. M. Lindstrom, R.L Cottier, R Lukic-Zrnic, Brian P. Gorman, J. A. Dura, L. A. Almeida, T. D. Golding, C.L. Littler, H. F. Schaake, W. Zhao, John H. Dinan
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 20:246-250
Hg 1− x Cd x Te( x ∼0.22) samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons ( ∼1.0×10 16 −1.7×10 16 n/cm 2 ) and subsequently annealed for ∼24 h in Hg overpressure to remove damage
Publikováno v:
MRS Proceedings. 1757
The dependence of dark conductivity and room temperature Raman spectra on boron and hydrogen incorporation in thin films of hydrogenated amorphous silicon (a-Si:H) prepared by plasma enhanced chemical vapor deposition was investigated. It was found t
Autor:
P. C. Chow, U. Kirschbaum, D Washington-Stokes, R Lukic, T.P Hogan, T. D. Golding, C.L Littler
Publikováno v:
Journal of Crystal Growth. :854-857
A detailed study of the growth of Al x In 1-x As 1-y Sb y /GaSb multilayers on GaSb(100) substrates by molecular beam epitaxy (MBE) has been performed as part of an investigation for the use of this materials system for kinetic heterojunctions (KHJs)