Zobrazeno 1 - 10
of 26
pro vyhledávání: '"C.K. Pithawa"'
Publikováno v:
IEEE Transactions on Nuclear Science. 62:264-271
We have developed an integrated $\Delta {\hbox{E–E}}$ silicon detector telescope using silicon planar technology. Standard integrated circuit technology involving double-sided wafer processing has been used to realize two detectors on a single chip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d90f2eac2d43da9b7e7539d080a34a48
https://doi.org/10.1109/tns.2015.2390218
https://doi.org/10.1109/tns.2015.2390218
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 737:242-247
Photofission experiments have been conducted at the industrial 10 MeV LINAC of Bhabha Atomic Research Centre, to develop a method for quantification of actinides. A number of natural uranium and thorium samples were fabricated in pure and mixed forms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::774361303b3308305b1da13374930f17
https://doi.org/10.1016/j.nima.2013.11.038
https://doi.org/10.1016/j.nima.2013.11.038
Autor:
Swadeshmukul Santra, P. Mukhopadhyay, A. Chatterjee, R. K. Choudhury, Anita Topkar, A.K. Singh, C.K. Pithawa
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 654:330-335
An integrated ΔE–E silicon detector telescope using silicon planar technology has been developed. The technology developed is based on standard integrated circuit technology and involves double sided wafer processing. The ΔE and E detectors have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa1b72a292f30c4958f2f9f9b29df648
https://doi.org/10.1016/j.nima.2011.07.001
https://doi.org/10.1016/j.nima.2011.07.001
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 621:713-715
A boron-10 lined proportional counter has been fabricated, which can work up to 250 °C ambient temperature. A new and improved technique of anode wire mounting has been adapted, which has greatly eliminated the occurrence of breakdown pulses, while
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51caa904efac8ea506481f5e6ab12139
https://doi.org/10.1016/j.nima.2010.05.011
https://doi.org/10.1016/j.nima.2010.05.011
Publikováno v:
VLSI Design
Non-Manhattan CMOS devices are gaining attention because of their special properties. In this paper waffle and closed gate structures are discussed and issues related to their use in CAD tools are addressed. The waffle devices are used where large as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01176e3b5141b53fab341bff46bf3ec5
https://doi.org/10.1109/vlsid.2011.71
https://doi.org/10.1109/vlsid.2011.71
Publikováno v:
2010 2nd International Conference on Reliability, Safety and Hazard - Risk-Based Technologies and Physics-of-Failure Methods (ICRESH).
The reliability of electronic systems, used in nuclear power plants, is traditionally estimated with empirical databases such as MIL-HDBK-217, PRISM etc. These methods assign a constant failure rate to electronic devices, during their useful life. Cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe20fd86df2aac7770369c8e6c361a90
https://doi.org/10.1109/icresh.2010.5779587
https://doi.org/10.1109/icresh.2010.5779587
Publikováno v:
2010 2nd International Conference on Reliability, Safety and Hazard - Risk-Based Technologies and Physics-of-Failure Methods (ICRESH).
Accelerated tests have been conducted on a gamma compensated boron lined ionization chamber developed for reactor safety and control applications. In this detector, 40.5% enriched 10B has been coated on the electrode using multiple dip coating techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6cc17b7585f9341684533a0601e7589
https://doi.org/10.1109/icresh.2010.5779568
https://doi.org/10.1109/icresh.2010.5779568
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