Zobrazeno 1 - 10
of 40
pro vyhledávání: '"C.K. Pao"'
Publikováno v:
IEEE Transactions on Electron Devices. 42:1419-1424
An optimized pseudomorphic high electron mobility transistor (PHEMT) epitaxial structure processed with a novel single gate recess technique is shown to achieve 850 mW of output power (760 mW/spl middot/mm/sup -1/ saturated power density) with 50% po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bf3ddf6da8dbd660c2855addae5c28b
https://doi.org/10.1109/16.398657
https://doi.org/10.1109/16.398657
Publikováno v:
Microwave and Millimeter-Wave Monolithic Circuits.
A millimeter-wave monolithic GaAs Gunn oscillator has been designed, fabricated and tested. Epitaxial layers were grown by conventional vapor phase epitaxy on semi-insulating substrate. The matching circuit and bias circuitry were monolithically fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6931a88c12132277d9495d7a3074aa57
https://doi.org/10.1109/mcs.1987.1114505
https://doi.org/10.1109/mcs.1987.1114505
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
Several monolithic integrated circuits with state-of-the-art performances have been successfully developed for a W-band (75- to 110-GHz) channelized monolithic receiver. The receiver comprises one four-channel multiplexer, four balanced mixers, four
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78f967332874c12f60d9c558f4e36418
https://doi.org/10.1109/mwsym.1989.38680
https://doi.org/10.1109/mwsym.1989.38680
Publikováno v:
10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..
Components for a W-band monolithic subharmoniously pumped receiver have been developed. A conversion loss of 8.8 dB has been achieved for a monolithic W-band subharmonically pumped mixer with a Q-band local oscillator (LO) drive of 10 dBm. A monolith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ea9245311f2b84905404d84282b7b4d
https://doi.org/10.1109/gaas.1988.11050
https://doi.org/10.1109/gaas.1988.11050
Publikováno v:
IEEE 1988 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers..
A monolithic V-band GaAs FET transmit-receive switch is described. The insertion loss for the switch-on path is less than 1.5 dB across a 2-GHz bandwidth (59 to 61 GHz) and is less than 3.2 dB across an 8-GHz bandwidth (56 to 64 GHz). The isolation d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80636a21e5bb087d4ff14239bc8e3fc
https://doi.org/10.1109/mcs.1988.197299
https://doi.org/10.1109/mcs.1988.197299
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
A broadband parameter-extraction technique is developed for the equivalent circuit of planar inductors based on measured S-parameters and the use of Y-parameters. The broadband information allows the definition of a concise quality measure and freque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbd495fddef6db6fb5ea9deee8c30a34
https://doi.org/10.1109/mwsym.1992.188253
https://doi.org/10.1109/mwsym.1992.188253
Publikováno v:
GaAs IC Symposium Technical Digest 1992.
High-efficiency X-band power GaAs-AlGaAs HBT (heterojunction bipolar transistor) performance has been achieved. A common-base 6-emitter-finger HBT device (each finger periphery 2 mu m*20 mu m) exhibited a power-added-efficiency of 62.1%, an output po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1752db7ec6f994498271d2b166437e56
https://doi.org/10.1109/gaas.1992.247270
https://doi.org/10.1109/gaas.1992.247270
Publikováno v:
Proceedings of IEEE Electrical Performance of Electronic Packaging.
A monolithic X-band coplanar waveguide power amplifier utilizing high yield flip chip interconnect technology has been designed and fabricated. A peak power of 2.5 watts with a power added efficiency better than 24% at 8 GHz has been achieved. >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86879d88e144f3586a2780f2ba6b9124
https://doi.org/10.1109/epep.1993.394598
https://doi.org/10.1109/epep.1993.394598
Publikováno v:
IEEE International Digest on Microwave Symposium.
Double-drift Si IMPATT (impact avalanche and transit time) diodes with hybrid Read profiles were designed, fabricated and tested for millimeter-wave frequency operation. Vapor phase epitaxy (VPE) growth was used to achieve well-controlled, abrupt n-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8a54b3289a87f3aadc4f1db28f630e
https://doi.org/10.1109/mwsym.1990.99730
https://doi.org/10.1109/mwsym.1990.99730
Publikováno v:
IEEE International Digest on Microwave Symposium.
A novel approach for deembedding is presented which utilizes known physical transmission line lengths instead of electrical characteristics for calibration standards. This allows one to perform millimeter-wave deembedding for waveguide-based vector n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cadac8c5ea4c03533b34f58891c81f2d
https://doi.org/10.1109/mwsym.1990.99756
https://doi.org/10.1109/mwsym.1990.99756