Excitation mechanism of Er in Si studied with a free-electron laser

Autor: H.H.P.T. Bekman, Tom Gregorkiewicz, C.J.G.M. Langerak, I. Tsimperidis, Jurgen Michel, D. T. X. Thao, Lionel C. Kimerling

Publikováno v: Journal of Luminescence, 1-4, 80, 291-295
Journal of Luminescence, 80(1-4), 291-295. Elsevier
Journal of Luminescence, 80, 291-295

We investigate the influence of infrared illumination using a free-electron laser on the photoluminescence of erbium-implanted silicon material. In addition to the earlier reported quenching of the Er-related photoluminescence due to dissociation of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::156da44743d26682612f0fa0bdbc80e5
https://doi.org/10.1016/s0022-2313(98)00114-8

Cyclotron resonance of both magnetopolaron branches for polar and neutral optical phonon coupling in the layer compound InSe

Autor: D.F. Howell, Xiaoguang Wu, A. Chevy, J. T. Devreese, C.J.G.M. Langerak, John Singleton, Robin J. Nicholas, M. Watts, L. Van Bockstal, François M. Peeters, Fritz Herlach

Publikováno v: Pysical review: B

Resonant polaron coupling has been observed by cyclotron resonance of two-dimensional electrons in the polar semiconductor InSe. Both upper and lower branches of the magnetopolaron are seen over a wide range of field (B=18--34 T), allowing an accurat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e88aa89f8afb75af9ef2f7e3a33554b
https://doi.org/10.1103/physrevb.45.12144

2D cyclotron resonance and magneto-polaron coupling to homopolar and lo phonons in the layered semiconductor InSe

Autor: C.J.G.M. Langerak, A. Chevy, D.F. Howell, T.J.B.M. Janssen, Robin J. Nicholas, John Singleton

Publikováno v: Surface Science. 229:496-500

We have studied cyclotron resonance of the naturally occurring 2DEG found in the layered semiconductor InSe at magnetic fields up to 30 T. At low fields the resonances are split due to disorder. At higher fields we have observed resonant “polaron�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0174cab86d35eb08641ab4971dde8479
https://doi.org/10.1016/0039-6028(90)90939-6

Optically Detected Magnetophonon Resonance in GaAs-GaAlAs Heterojunctions

Autor: J. T. Devreese, Robin J. Nicholas, M. Watts, C.J.G.M. Langerak, C. T. Foxon, X.-G. Wu, D. J. Barnes, J.J. Harris, François M. Peeters, John Singleton

Publikováno v: Springer Series in Solid-State Sciences ISBN: 9783642844102
Proceedings of High Magnetic Fields in Semiconductor Physics III / Landwehr, G. [edit.]

We present an experimental observation of the magnetophonon effect in the frequency dependent conductivity of a GaAl-GaAlAs heterojunction. The cyclotron resonance position and linewidth are found to oscillate as a function of magnetic field and show

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8000fd7a85a53644374e0bd3f5bc7d66
https://doi.org/10.1007/978-3-642-84408-9_94

Carrier-concentation-dependent electron-LO-phonon coupling observed in GaAs-(Ga,Al)As heterojunctions by resonant-polaron cyclotron resonance

Autor: Hopkins Ma, Robin J. Nicholas, C. T. Foxon, J.A.A.J. Perenboom, C.J.G.M. Langerak, D. J. Barnes, P. J. van der Wel, John Singleton

Publikováno v: Physical Review. B, Condensed Matter and Materials Physics, 38, pp. 78131-13142
Physical Review. B, Condensed Matter and Materials Physics, 38, 78131-13142

Contains fulltext : 112838.pdf (Publisher’s version ) (Open Access)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d12ab57d953cd3f382c65f4d86bd42e
https://pubmed.ncbi.nlm.nih.gov/9946288