Zobrazeno 1 - 10
of 41
pro vyhledávání: '"C.J. Varker"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 3:206-215
The interlayer van der Pauw (VDP) resistor alignment bridge combines the sheet resistor and registration-sensitive bridge into one unified structure. As a result of symmetry, it does not require the width corrections resulting from image exposure and
Publikováno v:
Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94.
Hot carrier (HC) reliability tests on 0.5 /spl mu/m BiCMOS NPN transistors indicate that process and structural factors both impact HC reliability. Important process factors include the dopant profiles in the emitter, active base, link base and extri
Publikováno v:
31st Annual Proceedings Reliability Physics 1993.
Experimental data that support a recently proposed model for electromigration in the metal film interconnects are presented. The results indicate that the grain structure of the film coupled with the temperature dependence of the lattice and grain bo
Publikováno v:
30th Annual Proceedings Reliability Physics 1992.
Experimental results are presented of an investigation designed to develop an understanding of the physical mechanisms and the process inputs causing reduced hot carrier reliability in BiCMOS npn transistors. The overall objective is to correlate and
Publikováno v:
IEEE Transactions on Electron Devices. 31:462-467
The pulsed MOS capacitor is routinely used to measure the generation lifetime. A new technique is described here in which the same device is used to obtain the recombination lifetime. The measurement technique is identical to the commonly used pulsed
Publikováno v:
Materials Science Forum. :1153-1158
Autor:
C.J. Varker
Publikováno v:
IEEE Transactions on Electron Devices. 27:2205-2212
Experimental results are presented on reverse current (I R ) inhomogeneities in n+-p diode arrays fabricated on wafers selected from dislocation-free Czochralski-grown silicon crystals. The crystals are boron doped with a resistivity of 10 Ω.cm and
Autor:
H.C. Lin, C.J. Varker
Publikováno v:
Proceedings of the IEEE. 57:1793-1795
Metal-nitride-oxide-semiconductor (MNOS) field-effect transistors can be changed from enhancement mode to depletion mode after the application of polarizing voltage. When such a polarized MNOS device is used as a load in a switching circuit, the supp
Autor:
C.J. Varker, A.J. Gonzales
Publikováno v:
1970 International Electron Devices Meeting.
The conventional slow-scanning electron-microscope system has permitted limited monitoring of dynamic events. The information is recorded on sheet photographic film requiring 30-60 sec exposure time. A newly developed rapid-scan electron-microscope s
Autor:
C.J. Varker, E.M. Juleff
Publikováno v:
Proceedings of the IEEE. 55:728-729
A method is briefly described for direct read-out of information written in SiO 2 films by a finely focused scanning electron beam. The technique utilizes the electron beam induced current collected at a p-n junction. Preliminary results are presente