Zobrazeno 1 - 10
of 55
pro vyhledávání: '"C.J. Gibbings"'
Publikováno v:
Journal of Applied Physics. 78:2823-2829
A comparison is made of the dc electrical characteristics of Si/Si1−xGex heterojunction bipolar transistors (HBTs) fabricated on high oxygen content material grown using molecular beam epitaxy and low oxygen content material grown using chemical va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd4a6c050e613092ff7aeb4e1be28d1b
https://doi.org/10.1063/1.360082
https://doi.org/10.1063/1.360082
Autor:
David Bowen, David Gordon-Smith, C.J. Gibbings, Linn W. Hobbs, Linda Hart, M. A. Capano, C.R. Thomas, M. A. G. Halliwell
Publikováno v:
Journal of Crystal Growth. 116:260-270
The lattice relaxation of strained Si 1− x Ge x layers on Si (001) substrates has been examined. Three specimens consisting of a single Si 1− x Ge x layer were grown by molecular beam epitaxy. All layers were grown with a nominal composition of x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c315ecb5b80770c45a0ca351ee28358
https://doi.org/10.1016/0022-0248(92)90632-s
https://doi.org/10.1016/0022-0248(92)90632-s
Autor:
C.J. Gibbings, A.S.R. Martin, J. Whitehurst, I.R.C. Post, C.G. Tuppen, Z.A. Shafi, D.J. Godfrey, M.E. Jones, Peter Ashburn, G.R. Booker
Publikováno v:
Microelectronic Engineering. 15:135-138
The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si 1-x Ge x HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acab6fc4354082491eedafe4c2f9ac1a
https://doi.org/10.1016/0167-9317(91)90198-m
https://doi.org/10.1016/0167-9317(91)90198-m
Publikováno v:
IEEE Transactions on Electron Devices. 38:1973-1976
Si/SiGe heterojunction transistors were fabricated with 21.4 nm, heavily doped (5*10/sup 19/ cm/sup -3/) bases. Electrical results from these transistors are presented, and compared with results from comparable silicon homojunction control devices. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e1314a7584f571a30f20c1265d4822e
https://doi.org/10.1109/16.119045
https://doi.org/10.1109/16.119045
Publikováno v:
Thin Solid Films. 184:221-227
Silicon molecular beam epitaxy (MBE) on Si(001) substrates patterned with oxide has been studied. The transition between polycrystalline silicon deposition on the oxide and in situ etching of the oxide was compared, using a thermodynamic model. Islan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02940da3a12a6872bd054c653eb4e08a
https://doi.org/10.1016/0040-6090(90)90416-b
https://doi.org/10.1016/0040-6090(90)90416-b
Autor:
C.G. Toppen, P.C. Klipstein, C.J. Gibbings, M.A. Gell, I.D. Ward, A.C. Churchill, M.H. Herman, M.E. Jones
Publikováno v:
Vacuum. 41:947-950
Electron-beam electroreflectance (EBER) has been used to investigate electronic and optical properties of short-period SiGe superlattices grown by molecular beam epitaxy on (001)Si. The advantage of the EBER method over conventional ER techniques
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd00ac33b7983aeefa1511dd3cd2803
https://doi.org/10.1016/0042-207x(90)93830-c
https://doi.org/10.1016/0042-207x(90)93830-c
Publikováno v:
MRS Proceedings. 220
A series of relaxed Si1−xGex alloy layers with germanium contents up to 70% has been deposited on silicon. Although direct deposition ot these highly mismatched layers on silicon gave dislocation densities of 109-1010cm2 and poor morphology, it was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bdff96a4fa32481a598a5c660fd6b37
https://doi.org/10.1557/proc-220-187
https://doi.org/10.1557/proc-220-187
Autor:
D C.G. Tuppen, C.J. Gibbings
Publikováno v:
MRS Proceedings. 102
The dislocation density in undoped Si-MBE layers grown on wafers without any chemical pre-cleaning has been studied. The oxide layer was removed using a low silicon flux. Factors influencing the dislocation density have been studied, including substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd21a231aaec835b874ac94871eff099
https://doi.org/10.1557/proc-102-311
https://doi.org/10.1557/proc-102-311
