Zobrazeno 1 - 10
of 19
pro vyhledávání: '"C.H. Ellenwood"'
Autor:
T.J. Headley, Loren W. Linholm, Christine E. Murabito, E.H. Bogardus, Michael W. Cresswell, B.A. am Ende, William F. Guthrie, R.A. Allen, C.H. Ellenwood
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 16:239-248
A technique has been developed to determine the linewidths of the features of a prototype reference material for the calibration of critical-dimension (CD) metrology instruments. The reference features are fabricated in mono-crystalline-silicon with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e65a0f0ba04dcc1dc41a7ac6d9a669a
https://doi.org/10.1109/tsm.2003.812163
https://doi.org/10.1109/tsm.2003.812163
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 45:136-141
Enhancements to the voltage-dividing potentiometer, an electrical test structure for measuring the spatial separations of pairs of conducting features, are presented and discussed. These enhancements reduce or eliminate systematic errors which can ot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e810c6d4ce7319be27caa378abf5b90d
https://doi.org/10.1109/19.481325
https://doi.org/10.1109/19.481325
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 7:266-271
A new electrical test structure for overlay measurement has been evaluated by replicating arrays of its complementary components from two different photomasks into a conducting film on a quartz substrate. The features resulting from images projected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e66b62652dc87fbbd9e27fc8c4008007
https://doi.org/10.1109/66.311328
https://doi.org/10.1109/66.311328
Autor:
R.A. Allen, M.W. Cresswell, C.E. Murabito, W.F. Guthrie, L.W. Linholm, C.H. Ellenwood, E. Hal Bogardus
Publikováno v:
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a696e40a10d30846029d20511a024d1e
https://doi.org/10.1109/icmts.2002.1193163
https://doi.org/10.1109/icmts.2002.1193163
Publikováno v:
1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460).
The ultimate goal of this work is to develop design guidelines for electromigration test structures and to revise existing standard test methods for fast wafer-level and conventional package-level stress testing. These tests all involve stressing a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5691fd1a35bba2b23f3c23087dfbe591
https://doi.org/10.1109/irws.1999.830557
https://doi.org/10.1109/irws.1999.830557
Publikováno v:
ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures.
Improvements to the design of a modified voltage-dividing potentiometer permit the measurement of the center-to-center separations of parallel features with residual errors well below 10 nm. The modified test structure offers fabrication robustness a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::676d3a21e4a8f819708228a3b1b0fe46
https://doi.org/10.1109/icmts.1992.185964
https://doi.org/10.1109/icmts.1992.185964
Publikováno v:
ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures.
A new test structure is reported. It is designed to measure the positions of the images of an array of features projected from a mask into a resist film on substrate with accuracy better than 10 nm. The resist film on the substrate covers a nominally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41dc7ea3f9990ef34a849604abf0e73e
https://doi.org/10.1109/icmts.1993.292910
https://doi.org/10.1109/icmts.1993.292910
Autor:
R.A. Allen, J.C. Owen, C.H. Ellenwood, J.D. Benecke, Michael W. Cresswell, Loren W. Linholm, T.A. Hill, H.D. Stewart, S.R. Volk
Publikováno v:
Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures.
The measurement of layer-to-layer feature overlay will, in the foreseeable future, continue to be a critical metrological requirement for the semiconductor industry. Meeting the image placement metrology demands of accuracy, precision, and measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc2b062a2fd3a46abfe3a8a6dbcfff1c
https://doi.org/10.1109/icmts.1994.303504
https://doi.org/10.1109/icmts.1994.303504
Publikováno v:
Proceedings of the 1991 International Conference on Microelectronic Test Structures.
A test chip has been designed and fabricated for the evaluation of surface-diffusion phenomena. It allows the confirmation of the correct sample cross-section bevel angle and orientation for scanning electron microscope (SEM) inspection of step cover
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb4233f75a55922a0d178587c7012bc
https://doi.org/10.1109/icmts.1990.161709
https://doi.org/10.1109/icmts.1990.161709
Publikováno v:
ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095).
A technique has been developed to fabricate 100-nm critical dimension (CD) reference features with i-line lithography by utilizing a unique characteristic of single-crystal silicon-on-insulator films: under certain etch conditions, the edges of featu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cb372e870cfc7369fe44e565c5dcbdd
https://doi.org/10.1109/icmts.2000.844396
https://doi.org/10.1109/icmts.2000.844396