Zobrazeno 1 - 10
of 143
pro vyhledávání: '"C.H. Champness"'
Autor:
C.H. Champness, Zhenghe Xu
Publikováno v:
Applied Surface Science. :485-489
The introduction of an interlayer of CdO, of thickness up to 0.42 μm, between a layer of crystallized selenium and one of bismuth in the form of a Se CdO Bi diode, was found to increase the frequency below which negative capacitance appeared in forw
Publikováno v:
Solar Energy Materials and Solar Cells. 37:395-401
Using the Bridgman method, ingots of CuInSe2 have been grown, which are microcrackfree, void-free and adhesion-free. From these, p-type substrates have been obtained for the fabrication of preliminary CIS/CdS/ZnO and CIS/CdS/CdO photovoltaic cells, w
Autor:
C.H. Champness, C.H. Chan
Publikováno v:
Solar Energy Materials and Solar Cells. 37:75-92
An experimental study was made on a SeCdO photovoltaic cell of conventional structure to optimize the conditions during the dc reactive sputtering of the CdO layer. The parameters varied were: sputtering current, pressure, gas flow rate, depositio
Autor:
C.H. Chan, C.H. Champness
Publikováno v:
Solar Energy Materials and Solar Cells. 32:53-60
In Se-CdO photovoltaic cells fabricated in this laboratory, pinholes were intentionally created in the CdO window layer. It was found that, while their presence created low resistance paths for dark current, they had little effect on the cell photovo
Autor:
C.H. Chan, C.H. Champness
Publikováno v:
Solar Energy Materials and Solar Cells. 30:65-75
In the development of photovoltaic cells, it is helpful to monitor changes in the diffusion length of the minority carriers as fabrication changes are made. A convenient method of measurement of diffusion length in cells, where this quantity is relat
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
Room temperature measurements were made of electrical conductivity (sigma), Hall coefficient (RH) and Seebeck coefficient (alpha) on filamentary samples of p-type CuInSe2 and CuIn 1-xGaxSe2 with xles0.3, cut from vertically grown Bridgman ingots. Ana
Autor:
A.A. Al-Quraini, C.H. Champness
Publikováno v:
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.
Using monocrystalline p-type substrates of CuInSe/sub 2/ obtained from single crystal ingots of Bridgman-grown material, photovoltaic cells were fabricated with the layer structures CuInSe/sub 2//CdO and CuInSe/sub 2//CdS/CdO, where the CdO window la
Publikováno v:
Solar Energy Materials. 5:391-401
A photovoltaic SeCdO thin film cell has been fabricated by reactive sputtering of CdO on a crystallized selenium film using a cadmium target in the presence of argon plus residual air. Critical control of pressure is needed to obtain the appropria
Autor:
K. Ghoneim, C.H. Champness
Publikováno v:
Solar Cells. 13:121-131
Photovoltaic Se-CdO structures have been fabricated in which the amount of chlorine dopant in the selenium layer and the thickness of the polycrystalline selenium layer were both varied. The CdO layer was deposited by d.c. reactive sputtering and the