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pro vyhledávání: '"C.G. Morton"'
Akademický článek
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Autor:
C.G. Morton
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
We demonstrate for the first time the use of the Circuit Envelope method with the solution of the fundamental semiconductor device equations. The Harmonic Balance method is the starting point for this work and used to illustrate how the spectrum of c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ccd820403a8ca5934a895d27036ff07
https://doi.org/10.1109/mwsym.2016.7540391
https://doi.org/10.1109/mwsym.2016.7540391
Autor:
C.G. Morton, J. Wood
Publikováno v:
IEEE Transactions on Electron Devices. 41:1477-1480
In this paper a detailed charge control analysis is presented for a MESFET and a MODFET to show how the various capacitances associated with the region under the gate contact influence device performance. Where necessary, an exact description of elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0db239a249ef6bb1dbd0b7ebef655eae
https://doi.org/10.1109/16.297749
https://doi.org/10.1109/16.297749
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 5:23-39
An efficient algorithm is presented for the self-consistent numerical solution of the single-band effective mass equation. This algorithm has a different form depending on whether the effective mass is modelled as continuous or piecewise continuous.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e83cb316fd4a7ae72f1f7111a20994b4
https://doi.org/10.1002/jnm.1660050105
https://doi.org/10.1002/jnm.1660050105
Autor:
J. Wood, C.G. Morton
Publikováno v:
IEEE Transactions on Electron Devices. 45:1622-1624
The charge control behavior of a range of heterostructure material systems typical of MODFETs has been investigated using a numerical model, and the "effective position of the two-dimensional electron gas (2-DEG) in the channel", /spl Delta/d, has be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa12cc2ad3e2dea63b172868fe86a40a
https://doi.org/10.1109/16.701499
https://doi.org/10.1109/16.701499
Akademický článek
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Autor:
D.W.E. Allsopp, C.G. Morton
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
An analysis by self-consistent calculation of the intrinsic charge control in stepped channel InP HFET (heterostructure field-effect transistors) is presented. It is shown that the notch depth, its width, and its aspect ratio with the total channel w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22436a1a2c7557f5a9965d4f3d42460c
https://doi.org/10.1109/iciprm.1992.235548
https://doi.org/10.1109/iciprm.1992.235548
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
This paper reports a new, efficient physical HEMT model capable of accurately predicting DC, small- and large-signal performance. It has been interfaced to an industry standard simulator which allows for accurate, large-signal simulation to be integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26a6317bf925957301cccad78332b7a7
https://doi.org/10.1109/mwsym.1996.512283
https://doi.org/10.1109/mwsym.1996.512283
Publikováno v:
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
The results of a theoretical study of the charge control characteristics of different n-channel InP-based HFETs are presented. The calculations involve determining the variation of the two-dimensional electron gas (2DEG) density, n/sub s/, with gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0c6a68469faf031159336db902f3bd5
https://doi.org/10.1109/iciprm.1991.147352
https://doi.org/10.1109/iciprm.1991.147352
Autor:
C.M. Snowden, C.G. Morton
Publikováno v:
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
In this paper, we present corroborative material indicating the accuracy of our quasi-2D HEMT model when applied to the analysis of deep sub-micron devices. We compare our modelling results with those derived from ensemble Monte Carlo simulations, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6afa33921ff5b3aab6c9b4e4d6a6af0b
https://doi.org/10.1109/mwsym.1998.689345
https://doi.org/10.1109/mwsym.1998.689345