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Akademický článek

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High-rate, room-temperature synthesis of amorphous silicon carbide films from organo-silicon in high-density helicon wave plasma

Autor: James Lin, Peiyu Ji, Chongying Xu, Yuqiang Ding, Dongsheng Xu, Xiao Ma, C.G. Jin

Publikováno v: Vacuum. 164:355-360

In this study, amorphous silicon carbide (α-SiC) films were synthesized on 316L stainless steel by low pressure, high density helicon wave plasma (HWP), using tetramethylsilane (TMS) as the single-source precursor which is organometallic compound. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7735f98c94689c4b23f678578a973d88
https://doi.org/10.1016/j.vacuum.2019.03.004

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Akademický článek

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Synthesis, characterization, and thermal properties of novel silicon 1,1,3,3‐tetramethylguanidinate derivatives and use as single‐source chemical vapor deposition precursors

Autor: Chongying Xu, Yuqiang Ding, Peiyu Ji, C.G. Jin, Zhibiao Mao, Xiao Ma, Dongsheng Xu

Publikováno v: Applied Organometallic Chemistry. 34

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::70edd8aea272bb92387f571092943738
https://doi.org/10.1002/aoc.5349

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Structural and electrical properties of high-k HfO2 films modified by CHF3 and C4F8/O2 plasmas

Autor: C.G. Jin, Hui Zhang, Chao Ye, Y. Yang, Xueyan Wu, L.J. Zhuge

Publikováno v: Applied Physics A. 117:2057-2065

As-deposited HfO2 films were modified by CHF3, C4F8, and mixed C4F8/O2 plasmas in a dual-frequency capacitively coupled plasma chamber driven by radio frequency generators of 60 MHz as the high frequency (HF) source and 2 MHz as the low frequency sou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d480c380768bb5cf8ab6b7cf1814b3ac
https://doi.org/10.1007/s00339-014-8619-5

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Electrical properties improvement of high-k HfO2 films by combination of C4F8 dual-frequency capacitively coupled plasmas treatment with thermal annealing

Autor: Xueyan Wu, Chao Ye, Yaorong Wang, L.J. Zhuge, Wu Mingzhi, Huanxiang Zhang, Z. Zhang, H. J. He, C.G. Jin, Y. Yang, Tianyuan Huang

Publikováno v: Applied Surface Science. 311:117-123

The effect of fluorine incorporation on the electrical properties of HfO 2 gate oxide were investigated, especially on the frequency dispersion, hysteresis and the density of interface states. By treating HfO 2 films using octafluorocyclobutane (C 4

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f1f1c72ce15898d03c7e53b0a4176b2
https://doi.org/10.1016/j.apsusc.2014.05.021

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Helicon Plasma Discharge for Processing Wall Material

Autor: C.G. Jin, X.M. Wu, Wu Mingzhi, L.J. Zhuge, Tianyuan Huang

Publikováno v: Applied Mechanics and Materials. :28-32

A helicon wave plasma (HWP) discharge with strong magnetic field was investigated. The HWP was produced with an internal Nagoya III antenna that is perpendicular to the magnetic field and driven by a 13.56 MHz radio-frequency (RF) source. HWP was cha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::56d7556e08fa458519ac62c42aef5387
https://doi.org/10.4028/www.scientific.net/amm.513-517.28

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Tunable ferromagnetic behavior in Cr doped ZnO nanorod arrays through defect engineering

Autor: C.G. Jin, Yanguang Li, X.M. Wu, Q. Han, Zhe Chuan Feng, Z. F. Wu, Lanjian Zhuge, Yan Yang

Publikováno v: J. Mater. Chem. C. 2:2992-2997

Zn vacancy (VZn) effects on the microstructure and ferromagnetism (FM) of Zn0.94Cr0.06O nanorod arrays have been investigated using a combination of experimental measurements and first-principles calculations. The well-aligned Zn0.94Cr0.06O nanorod a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4adfed7522c0a222f24b2f3cb7f2b342
https://doi.org/10.1039/c4tc00074a

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Annealing temperature dependence of interface characteristic and energy-band alignment in ultra-thin HfLaO/Si and HfLaO/SiGe interfaces

Autor: C.G. Jin, Yuhui Yang, Zhuhui Wu, L.J. Zhuge, T. Yu, Xueyan Wu

Publikováno v: Materials Chemistry and Physics. 142:479-483

The interface characteristic and energy band alignment of HfLaO/Si and HfLaO/Si0.75Ge0.25 interface with and without annealing are studied by high-resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS). The res

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d0a6eab8b6e0183b285d6f5662ea52c1
https://doi.org/10.1016/j.matchemphys.2013.07.022

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Temperature dependence of electrical properties for MOS capacitor with HfO2/SiO2 gate dielectric stack

Autor: Y.J. Dong, C.G. Jin, Xueyan Wu, L.J. Zhuge, D. Cao, T. Yu

Publikováno v: Materials Science in Semiconductor Processing. 16:1321-1327

We investigated the temperature dependence of C–V and I–V characteristics in p-type Metal Oxide Semiconductor (MOS) capacitors with HfO2/SiO2 dielectric stacks. Dramatic degradation in the C–V characteristics at/over the measurement temperature

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6fa6afb67fafeaa5514f07dd2b38d968
https://doi.org/10.1016/j.mssp.2012.09.013

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