Zobrazeno 1 - 10
of 71
pro vyhledávání: '"C.F. Wheatley"'
Publikováno v:
IEEE Transactions on Nuclear Science. 50:2256-2264
A two-dimension simulation study of single-event gate rupture (SEGR) in radiation-hardened stripe cell power MOSFETs is reported. Simulations are performed on stripe-cell structures employing three different neck widths. A simple methodology is prese
Publikováno v:
IEEE Transactions on Nuclear Science. 48:1872-1878
A new single-event gate rupture radiation-hardened power MOSFET is reported. It is based upon a well-established radiation-hardened technology described in 1996. The hexagonal cells used in prior work are replaced with a stripe-cell structure produci
Publikováno v:
IEEE Transactions on Nuclear Science. 48:1879-1884
Experimental observations of an improved single-event gate rupture (SEGR) hardened stripe-cell MOSFET demonstrated that ion beam energy, penetration depth, and strike angle (tilt angle) have a significant influence upon the measured SEGR failure thre
Publikováno v:
IEEE Transactions on Nuclear Science. 48:2217-2221
In 1999, Titus et al. studied single-event gate rupture failures of vertical MOSFETs for many parameters where the MOSFET universe was assumed to consist of homogeneous devices. A non-homogeneous universe is now considered. Time-to-failure is studied
Publikováno v:
IEEE Transactions on Nuclear Science. 45:2492-2499
The effect of ion energy upon the ion-induced dielectric breakdown response of the capacitor response in vertical power metal-oxide semiconductor field effect transistors (MOSFETs) was investigated. The single event gate rupture response was experime
Autor:
Jeffrey L. Titus, C.F. Wheatley
Publikováno v:
IEEE Transactions on Nuclear Science. 45:2891-2897
Proton-induced dielectric breakdown of vertical power metal oxide semiconductor field effect transistors (MOSFETs) is reported for the first time and compared to the heavy-ion-induced gate rupture response. Power MOSFETs from five variants were fabri
A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs
Autor:
C. Dachs, Kenneth F. Galloway, Jeffrey L. Titus, C.F. Wheatley, M. Allenspach, G.H. Johnson, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2932-2937
The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional c
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2944-2951
SEGR response curves are presented for eighteen different device types of radiation-hardened power MOSFETs. Comparisons are made to demonstrate the technology's insensitivity to die size, rated blocking voltage, channel conductivity, and temperature.
Autor:
Kenneth F. Galloway, C.F. Wheatley, J.R. Brews, Ronald D. Schrimpf, R.L. Pease, M. Allenspach, Jeffrey L. Titus, D.I. Burton
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2938-2943
For the first time, experimental observations and numerical simulations show that the impact energy of the test ion influences the single-event gate rupture (SEGR) failure thresholds of vertical power MOSFETs. Current testing methodology may produce
Autor:
C.F. Wheatley, Eric Lorfevre, C. Dachs, M. Allenspach, J.-M. Palau, Jeffrey L. Titus, G.H. Johnson, Kenneth F. Galloway, Ronald D. Schrimpf, J.R. Brews
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2927-2931
For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The likelihood of triggering SEGR is shown to be dependent on the ion impact position. Hardening techn