Zobrazeno 1 - 10
of 187
pro vyhledávání: '"C.F. Hawkins"'
Publikováno v:
A48. CRITICAL CARE CASE REPORTS: CAUSES AND COMPLICATIONS OF ACUTE RESPIRATORY FAILURE.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f891353ffc03d4786eb9fbf069ab084
https://doi.org/10.1164/ajrccm-conference.2019.199.1_meetingabstracts.a1781
https://doi.org/10.1164/ajrccm-conference.2019.199.1_meetingabstracts.a1781
Publikováno v:
IEEE Spectrum. 33:66-71
With safety margins for reliability, test, failure analysis, and design verification shrinking, it would be a shame to give up the I/sub DDQ/ technique-and luckily, we may not have to. Steps can be taken to maintain its applicability as we rush deepe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::137650b4ccc424172f7e6f2fc714d463
https://doi.org/10.1109/6.535396
https://doi.org/10.1109/6.535396
Autor:
C.F. Hawkins
Publikováno v:
The British journal of tuberculosis and diseases of the chest. 41(2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2375b10595157fa9e49b9acc6908d53
https://pubmed.ncbi.nlm.nih.gov/20247446
https://pubmed.ncbi.nlm.nih.gov/20247446
Publikováno v:
IEEE Transactions on Nuclear Science. 37:2058-2064
Numerical simulations of the transient response of gallium arsenide (GaAs) thyristors to bursts of ionizing radiation are reported. The device simulator BAMBI 2.0, with incorporated GaAs transport models, is used. BAMBI is a 2-D time-dependent transp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::271a0b4e04ca5e5880b57d6df5fd0b64
https://doi.org/10.1109/23.101229
https://doi.org/10.1109/23.101229
Publikováno v:
ITC
The economic impact of Type I test errors that fail good product in electronic systems and PC boards is evaluated. Data show that an average of 46 percent of all valid component failures at the board and system level are, in fact, not failures. Data
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f164c2c81b7c6745bd500cd89b713b7
https://doi.org/10.1109/test.1992.527855
https://doi.org/10.1109/test.1992.527855
Autor:
C.F. Hawkins
Publikováno v:
ITC
Systems testing and diagnostics of complex electronic products has been characterized traditionally by an ad hoc dependance to each product. Although this style has never been optimum, it is what most of us do. This contrasts sharply with structured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed050f3c3d7df68601207917385ea421
https://doi.org/10.1109/test.1992.527869
https://doi.org/10.1109/test.1992.527869
Autor:
David H. Eppes, Jacob Wilcox, Mike Bruce, R.M. Ring, Paiboon Tangyunyong, Victoria J. Bruce, Edward I. Cole, C.F. Hawkins
Publikováno v:
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
Soft defects in integrated circuits (ICs) are defined as failures when the IC is partially functional, but will not operate properly under all specified conditions - these conditions may be within or outside normal limits. To address soft defects, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2d2d979cb6180a2035117421e53e2d0
https://doi.org/10.1109/leos.2003.1252974
https://doi.org/10.1109/leos.2003.1252974
Autor:
Victoria J. Bruce, W.-L. Chong, D.A. Benson, Daniel L. Barton, C.F. Hawkins, David H. Eppes, C.L. Henderson, Jacob Wilcox, Mike Bruce, R.M. Ring, J.M. Soden, Paiboon Tangyunyong, Edward I. Cole
Publikováno v:
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
Defect localization in modern ICs can be extremely challenging. To address this complexity several optically based methodologies have been developed over the past decade. These techniques will be described demonstrating their utility in locating defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85c114fe32cc390787ba165674fa49da
https://doi.org/10.1109/leos.2003.1252911
https://doi.org/10.1109/leos.2003.1252911
Publikováno v:
20th Annual IEEE Power Electronics Specialists Conference.
A distributed-circuit model is presented that analyzes the transient response and radiation rate threshold of a MOSFET under ionizing radiation. A system of ordinary differential equations with variable coefficients that govern the lateral base volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c920664a515f71c8d69c24878ab06794
https://doi.org/10.1109/pesc.1989.48566
https://doi.org/10.1109/pesc.1989.48566