Zobrazeno 1 - 10
of 33
pro vyhledávání: '"C.F. Chow"'
Publikováno v:
Thin Solid Films. 515:8122-8128
Thin layers of nanocrystalline FeSi 2 embedded in Si structures have been formed by Fe implantation using a metal vapor vacuum arc (MEVVA) ion source under various implantation and thermal annealing conditions. The microstructures were studied in det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b524dbe7ad6de0f234027c24722d8f1
https://doi.org/10.1016/j.tsf.2007.02.073
https://doi.org/10.1016/j.tsf.2007.02.073
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 259:871-874
FeSi2 precipitates with various structural properties embedded within silicon matrix were formed by iron ion implantation using a metal vapor vacuum arc ion source followed by thermal annealing at various conditions. The microstructure and phase prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77bd71f3c8901665736a2b96fc795045
https://doi.org/10.1016/j.nimb.2007.02.102
https://doi.org/10.1016/j.nimb.2007.02.102
Publikováno v:
Materials Science and Engineering: B. :444-448
Nanometer-sized β-FeSi 2 precipitates are formed in Si by ion beam synthesis (IBS). A systematic study is carried out to investigate the correlation among the implantation parameters, the microstructure, and the luminescence properties. On the one h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a08bff4faaf43f49e490376af9ee1ddc
https://doi.org/10.1016/j.mseb.2005.08.042
https://doi.org/10.1016/j.mseb.2005.08.042
Autor:
Quan Li, W.Y. Cheung, S.P. Wong, C.F. Chow, M. A. Lourenço, N. Ke, Yun Gao, Kevin P. Homewood
Publikováno v:
Materials Science and Engineering: B. :440-443
Silicon MOS structures with FeSi 2 precipitates embedded in the MOS active region have been fabricated and the electroluminescence (EL) properties from these FeSi 2 –Si MOS structures were measured as a function of temperature from 80 K to 300 K. C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11cee0f0388ba17cfbbf7779cfbcee1a
https://doi.org/10.1016/j.mseb.2005.08.038
https://doi.org/10.1016/j.mseb.2005.08.038
Publikováno v:
Personality and Individual Differences. 39:1147-1157
English and Chinese versions of the Anger Rumination Scale (ARS; Sukhodolsky, Golub, & Cromwell, 2001) were distributed to 495 British and 453 Hong Kong Chinese participants. Confirmatory factor analysis verified factorial equivalence between the Eng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d78766cafdff1123cf151d00925806cd
https://doi.org/10.1016/j.paid.2005.03.022
https://doi.org/10.1016/j.paid.2005.03.022
Publikováno v:
Indoor and Built Environment. 14:117-131
The effect of air supply temperature on the performance of a displacement ventilation (DV) system has been investigated. This paper is the second part of a 2 part series and the results are reported with regard to Indoor Air Quality (IAQ). The study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fa8d5ae396cb81a64acd76c5021c166
https://doi.org/10.1177/1420326x05052627
https://doi.org/10.1177/1420326x05052627
Akademický článek
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Autor:
N. Ke, C.F. Chow, S.P. Wong, G. Shao, Yun Gao, M. A. Lourenço, Quan Li, W.Y. Cheung, Kevin P. Homewood
Publikováno v:
SPIE Proceedings.
Semiconducting FeSi 2 has attracted considerable amount of research interest in the past decade for its potential applications as a silicon-based light emitting material. In this work, FeSi 2 precipitates were formed in Si by iron implantation into s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827f8ec1b8c58f051559e99d9b62b289
https://doi.org/10.1117/12.582335
https://doi.org/10.1117/12.582335
Autor:
S.P. Wong, Quan Li, Kevin P. Homewood, G. Shao, C.F. Chow, Yun Gao, M. A. Lourenço, N. Ke, W.Y. Cheung
Publikováno v:
MRS Proceedings. 862
We have prepared FeSi2 precipitates of nanometer size in Si by ion implantation using a metal vapor vacuum arc (MEVVA) ion source and studied their photoluminescence properties. Broad photoluminescence (PL) spectra at around 1550 nm were observed for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29a3cbc4f86570a501f2d42d5d76c02
https://doi.org/10.1557/proc-862-a9.7
https://doi.org/10.1557/proc-862-a9.7
Akademický článek
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