Zobrazeno 1 - 10
of 92
pro vyhledávání: '"C.F. Cao"'
Publikováno v:
Biomass Conversion and Biorefinery. 12:5001-5009
Evolved gases from AdBlue decomposition with different catalysts (Ti, Zr, Pt, SiO2, and γ-Al2O3) were analyzed with a thermogravimetric analyzer coupled to a mass spectrometer (TG-MS). Kinetic parameters of AdBlue decomposition process were calculat
Publikováno v:
Materials Today Communications. 27:102207
In the temperature range between 1873 K and 1233 K, structural evolution and dynamic properties of liquid Ni62Nb38 alloy have been studied by ab initio molecular dynamics. The evolution of local structure was characterized by pair distribution functi
Publikováno v:
Journal of Crystal Growth. 547:125816
In this work, we have observed the crystallization process of Li2O-Al2O3-SiO2 glass using a high-temperature confocal laser scanning microscope and studied its crystallization kinetics with differential thermal analysis. The value of activation energ
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Publikováno v:
Journal of Crystal Growth. 425:373-375
We report on the InAs quantum dot (QD) external cavity laser (ECL) using a digital mirror device (DMD) as the key component for wavelength tuning. The InAs QD laser diode was grown by gas source molecular-beam epitaxy, which had a broad gain profile.
Publikováno v:
Journal of Crystal Growth. 378:141-144
We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optimization of the growth temperatures of the compositionally graded InGaP layer and the indium content in the top metamorphic InGaP layer, almost fully r
Publikováno v:
Infrared Physics & Technology. 55:205-209
We report on the optical characteristics of InAs quantum dots based on the InP(1 0 0) substrate grown by gas source molecular beam epitaxy without assisting any other methods. The photoluminescence was carefully investigated by adjusting the thicknes
Publikováno v:
Materials Science in Semiconductor Processing. 15:86-90
We report on the lasing characteristics of InAs/InP(100) quantum dots laser through changing the temperature under continuous-wave mode. Three lasing peaks are simultaneously observed at temperature of 80 K and the lasing order of each peak is unrela
Publikováno v:
Infrared Physics & Technology. 54:445-448
We report on the temperature dependent lasing characteristics of InAs/GaAs quantum dot lasers under continuous wave mode. The five-stacked InAs quantum dots were grown by gas-source molecular beam epitaxy with slightly different thickness. Ridge wave
Publikováno v:
Journal of Crystal Growth. 312:3451-3454
We report on the InAs/GaAs quantum dot (QD) lasers grown by gas-source molecular beam epitaxy. Ridge waveguide lasers were processed on the grown structure consisting of five-stacked InAs QD layers formed by InAs layers with slightly different thickn